采用原位聚合法制备了PI/TiO2和PI/SiO2纳米复合薄膜.研究质量分数均为10%的两种纳米掺杂对PI复合薄膜介电性能的影响,采用光刺激放电电流法(PSD)表征两种纳米颗粒对PI复合薄膜陷阱能级的影响,通过陷阱理论对介电性能的影响机制进行探讨.结果表明:TiO2和SiO2纳米掺杂提高了PI的电导率和介电常数,介质损耗相应增加,耐电晕寿命明显提高,电气强度虽有所下降但仍满足实际需要.两种纳米掺杂都在PI基体中引入了大量的浅陷阱,PI/TiO2和PI/SiO2复合薄膜的陷阱能级范围分别为1.83~2.85 eV和2.13~2.83 eV,且SiO2纳米颗粒引入的浅陷阱密度低于TiO2纳米颗粒.在此基础上,通过陷阱理论分析了两种复合薄膜的耐电晕老化机制.
PI/TiO2 and PI/SiO2 nano composite films were prepared through in-situ polymerization method. The effects of two nano-doping with mass fraction of 10% on the dielectric properties of the PI compos-ite films were studied. The influence of two nanoparticles on the trapping levels of the PI composite films were studied using photon-stimulated discharge current method (PSD). Meanwhile, the influence mechanism of dielectric properties was discussed according to the trap theory. The results show that after doping nano TiO2 and SiO2, the conductivity and permittivity of the PI films increase, and the dielectric loss and corona resistance life increase, while the electric strength decreases, but it still meets the practi-cal requirements. A mass of shallow trap is introduced in the PI films after doping two nanoparticles. The trapping level of PI/TiO2 and PI/SiO2 composite film is 1.83~2.85 eV and 2.13~2.83 eV, respectively, and the density of shallow trap introduced by SiO2 nanoparticles is lower than that introduced by TiO2 nanoparticles. On this basis, the corona ageing resistance mechanism of two PI composite films was ana-lyzed by trap theory.
参考文献
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%