通过在FeSO4溶液中将FTO(F掺杂SnO2)导电玻璃电化学阴极极化,随后在500℃空气中热氧化,制备出对可见光有响应的Fe掺杂FTO薄膜.用扫描电子显微镜(SEM),X射线衍射(XRD)和X射线光电子能谱(XPS)表征了薄膜的形貌、结构和表面特性.在可见光下测试了薄膜在1.0 mol/L NaOH溶液中零偏压下的光电流-时间曲线.结果显示,电化学修饰后的FTO薄膜表面呈纳米多孔形貌,薄膜中有1％(原子分数)左右的Fe元素掺杂且存在正交结构SnO2和四方结构SnO2两种物相.Fe掺杂FTO的光电流密度为0.5 μA/cm2,比无Fe掺杂的FTO薄膜(0.019 μA/cm2)显著增强.
A visible-light-responsive Fe-doped FTO (F-doped SnO2) thin film was prepared by cathodic polarization of FTO conductive glass in a FeSO4 solution followed by thermal oxidation in air at 500 ℃.The morphology,structure and surface composition of the thin film were characterized by scanning electron microscopy (SEM),X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).The photocurrent vs.time curve of the thin film was measured in 1.0 mol/L NaOH solution under visible light and zero bias.The results showed that the electrochemically modified FTO thin film contains about 1.0at％ of Fe,comprises two structural phases of tetragonal and orthorhombic SnO2,and presents a nanoporous morphology.The photocurrent density of the Fe-doped FTO thin film is 0.5 μA/cm2,which is significantly higher than that of the undoped FTO thin film (0.019 μA/cm2).
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