以CuCl2·2H2O和正硅酸乙酯(TEOS)作为前驱体,配制了透明稳定的Cu2+-SiO2复合溶胶.采用循环伏安法研究了Cu2+在该溶胶中的电化学性质,以恒电位法在氧化铟锡(ITO)导电玻璃表面沉积了凝胶复合薄膜.采用扫描电镜、能谱、X射线衍射对复合薄膜进行了表征,以紫外-可见光谱测试了薄膜的线性光学性能.结果表明,控制电位在-0.24 ～ 0.2 V和负于-0.24 V(相对于饱和甘汞电极)可分别制备出Cu+-SiO2和Cu-SiO2凝胶薄膜,前者的平均光学带隙宽度(Eg)为1.94 eV,略高于后者的1.92 eV.由于Cu在溶胶中是连续成核,导致了Cu-SiO2凝胶薄膜中的Cu颗粒大小不均匀(在几十纳米至几微米之间),吸收光谱在400～500 nm出现了Cu带间迁移的吸收峰.
A transparent and stable Cu2+-SiO2 composite sol was prepared with CuCl2·2H2O and tetraethyl orthosilicate (TEOS) as precursors.The electrochemical behavior of Cu2+ in the composite sol was studied by cyclic voltammetry.Some composite thin films were prepared on ITO (indium tin oxide) conductive glass by potentiostatic electrodeposition and characterized by scanning electron microscopy,energy-dispersive spectrometry and X-ray diffraction.The linear optical properties of the as-prepared thin films were measured by ultraviolet-visible spectroscopy.It was found that the Cu+-SiO2 and Cu-SiO2 composite thin films were prepared at a potential ranging from-0.24 V to 0.2 V and more negative than-0.24 V (all potentials are with respect to a saturated calomel electrode),respectively.The average optical bandgap (Eg) of Cu+-SiO2 thin film is 1.94 eV,which is larger than that of Cu-SiO2 thin film (1.92 eV).The size of Cu particles in Cu-SiO2 thin film is not uniform (from tens of nanometer to several micron) due to its progressive nucleation.The broad absorption band in the region of 400-500 nm is present,which is related to the interband transition of metallic copper.
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