用射频溅射法制备了Cu夹层的Fe-Cu-Cr-V Si-B三明治膜,在不同条件下对样品进行了退火处理,在最佳退火条件下,样品的软磁特性得到明显改善,从而获得了优良的巨磁阻抗(GMI)效应.研究了GMI效应与交变电流频率f和外加直流磁场H关系在5 MHz的特征频率下,最大的横向阻抗比△ZH/Zm达91%.由于样品的三明治结构,横向磁阻抗比明显优于纵向.
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