探讨了PLZT铁电陶瓷的电疲劳特性及疲劳机理.测量并比较了室温下电疲劳前后材料的介电温谱及电滞回线以及疲劳试样在高于Curie温度之上保温数小时之后其室温下的介电温谱及电滞回线.测试结果表明疲劳试样在高于Curie温度之上保温数小时之后其室温下的介电温谱及电滞回线明显不同于电疲劳前试样的介电温谱及电滞回线.SEM分析表明疲劳前样品的断裂模式主要为穿晶断裂,而疲劳后样品的断口模式主要为沿晶断裂.利用原位XRD分析得出样品在交流电场下由90°畴变导致的畴变应变高达0.1%,这种反复高畴变应变造成的沿晶微裂纹,最终导致了铁电陶瓷的电疲劳.
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