采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜.研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明,多晶ZAO薄膜具有(001)择优取向且呈柱状生长,能量机制决定其微观生长状态.讨论了薄膜的内应力,高的沉积温度和低的溅射功率可有效减小薄膜的内应力.优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到3×10-4-4×10-4Q·cm和80%以上.
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