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采用电化学辅助技术在LY12铝合金表面沉积了两种防护性硅烷膜(1,2-二-(三乙氧基硅基)乙烷(BTSE)膜与十二烷基三甲氧基硅烷(DTMS)膜).电化学阻抗谱测试结果显示,经硅烷化处理后铝合金的耐蚀性能得到大幅度提高,并且发现在阴极电位下沉积所得硅烷膜的耐蚀性能较常规"浸涂法"有明显提高;两种硅烷膜均存在一个最佳的"临界阴极电位"(-0.8V),在此电位下制得的膜耐蚀性最佳.扫描电镜观察显示临界电位下所得硅烷膜最为完整致密,电位过正不利于成膜,而电位继续变负膜表面呈现多孔形貌,可能与氢气的生成并溢出破坏表面有关.由于在硅烷分子中含有疏水性较强的十二烷基长链,DTMS膜具有更好的耐蚀性.

参考文献

[1] Franquet A,Pen C L,Terryn H,Vereecken J.Electrochim Acta,2003; 48:1245
[2] Plueddmann E P.Silane Coupling Agents.2nd ed.,New York:Plenum Press,1990:94
[3] Sundararajan G P,van Ooij W J.Surf Eng,2000; 16:315
[4] Zhu D Q,van Ooij W J.Corros Sci,2003; 2004; 45:2177
[5] Hu J M,Liu L,Zhang J T,Zhang J Q,Cao C N.Acta Metall Sin,2004; 40:1189(胡吉明,刘倞,张金涛,张鉴清,曹楚南.金属学报,2004;40:1189)
[6] van Ooij W J,Zhu D Q,Prasad G.Surf Eng,2000; 16:386
[7] Zucchi F,Grassi V,Frignani A.Corros Sci,2004; 46:2853
[8] Subramanian V,van Ooij W J.Corrosion,1998; 54:204
[9] Zhu D Q,van Ooij W J.Electrochim Acta,2004; 49:1113
[10] Palanivel V,Zhu D Q,van Ooji W J.Prog Organic Coat,2003; 47:384
[11] Woo H,Reucroft P J,Jacob R J.J Adhes Sci Technol,1993; 7:681
[12] Sheffer M,Groysman A,Mandler D.Corros Sci,2003; 45:2893
[13] Gandhi J S,van Ooij W J.J Mater Eng Perform,2004;13:475
[14] Zhu D,van Ooij W J.J Adhes Sci Technol,2002; 16:1235
[15] Beccaria A M,Chiaruttini L.Corros Sci,1999; 41:885
[16] Franquet A,Terryn H,Vereecken J.Thin Solid Films,2003; 441:76
[17] Bertelsen C M,Boerio F J.Prog Organic Coat,2001; 41:239
[18] Shacham R,Avnir D,Mandler D.Adv Mater,1999; 11:384
[19] Franquet A,Terryn H,Vereecken J.Appl Surf Sci,2003;211:259
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