用磁控溅射工艺分别在Si和Al2O3衬底上沉积两种不同织构组分的多晶柱状Cu膜,基于动力学标度方法表征两种薄膜的表面粗化特征.结果表明,Cu(111)取向晶粒组分多的薄膜的生长指数较大、表面粗化速率较快.对于较低温度下沉积的多晶柱状薄膜,基于其晶粒几何形态和弱化的晶界限制的特点,提出了一种表面粗化机制,认为薄膜的表面粗化主要依赖于其晶粒表面的粗化过程,而薄膜织构决定了薄膜表面粗化速率.
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