通过等离子体与Cu膜表面的分步反应合成了厚约4 nm的CuSiN自对准层.采用高分辨透射电子显微术(HRTEM)、纳米电子束探针能谱(EDS)和X射线衍射(XRD)表征CuSiN和Si/SiO2/TaN/Ta/Cu(CuSiN)/SiC:H/SiOC:H多层膜基体系的微结构和热稳定性.表明CuSiN层两侧分别出现SiN和Cu(Si)层,显著提高Cu/SiC:H/SiOC:H结构的热稳定性,其机制是在500℃退火温度条件下CuSiN层仍能够稳定存在,从而阻碍了Cu原子向SiC:H/SiOC:H介质薄膜体内的扩散.
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