利用分子动力学在原子尺度模拟了单晶Cu(111)面纳构件的纳米加工过程和加工后纳构件的拉伸过程,分析了纳刻划过程的缺陷行为及加工缺陷对纳构件力学特性的影响.结果表明:在纳刻划过程中,在针尖的前方和下方形成加工变形区;当刻划深度较浅时,位错仅在表面与亚表面繁殖;随着刻划深度的增加,加工后残留的缺陷数量增加,纳构件的有序度及首次屈服应力下降;加工后的纳构件内部,尤其在针尖退出处有较高的残余应力.对加工后的纳构件施加拉伸载荷,由于存在残留加工缺陷和较高残余应力,其应力-应变曲线在弹性上升阶段有局部下降;在塑性阶段,由于位错繁殖及位错塞积和中间部分原子的迁移重构使应力-应变曲线呈锯齿状逐渐下降.纳构件断裂失效前表现为单原子相连的纳链.纳构件的有序度随着刻划深度的增加而下降.在应变为0.8处,刻划较浅的纳构件的有序度较首次屈服处的有序度略好.
参考文献
[1] | Hoover W G,De Groot A J,Hoover C G,Stowers I F.Phys Rev,1990; 42A:5844 |
[2] | Shimada S,Ikawa N,Ohmori G,Tanaka H,Vchikoshi J.Ann CIRP,1992; 41:117 |
[3] | Inamura T,Takezawa N,Kumaki Y,Ikawa N.Ann CIRP,1993,42:79 |
[4] | Komanduri R,Chandrasekaran N,Raff L M.Wear,2000; 240:113 |
[5] | Chandrasekaran N,NooriKhajavi A,Raff L M,Komanduri R.Philos Mag,1998; 77B:7 |
[6] | Komanduri R,Chandrasekaran N,Raft L M.Phys Rev,2000; 61B:14007 |
[7] | Jun S,Lee Y M,Kim S Y,Im S Y.Nanotechnology,2004; 15:1169 |
[8] | Mulliah D,Kenny S D,Smith R.Phys Rev,2004; 69B:205407 |
[9] | Cho M H,Kim S J,Lim D S,Jang H.Wear,2005; 259 139 |
[10] | Koh S J A,Lee H P,Lu C,Cheng Q H.Phys Rev,2005; 72B:085414 |
[11] | Deshpande V.S,Needleman A,Van der Giessen E.Mater Sci Eng,2005; A400:401154 |
[12] | Chen D L,Chen T C.Nanotechnology,2005; 16:2972 |
[13] | Liang H Y,Ni X G,Wang X X.Acta Metall Sin,2001; 37:83(梁海弋,倪向贵,王秀喜.金属学报,2001;37:833) |
[14] | Ju S P,Lin J 8,Lee W J.Nanotechnology,2004; 15:1221 |
[15] | Wu H A,Wang X X,Ni X G,Wang Y.Acta Metall Sin,2002; 38:1219(吴恒安,王秀喜,倪向贵,王宇.金眉学报,2002;38:1219) |
[16] | Wu H A,Wang X X,Liang H Y,Liu G Y.Aeta Metall Sin,2002; 38:903(吴恒安,王秀喜,梁海弋,刘光勇.金属学报,2002;38:903) |
[17] | Heino P,Hakkinen H,Kaski K.Phys Rev,1998; 58B:641 |
[18] | Chang W J.Microelectron Eng,2003; 65:239 |
[19] | Potirniche G P,Horstemeyer M F,Wagner G J,Gullett P M.Int J Plast,2006; 22:257 |
[20] | Li M,Chu W Y,Gao K W,Su Y J,Qiao L J.Acta Metall Sin,2004; 40:449(李明,褚武扬,高克玮,宿彦京,乔利杰.金属学报,2004;40:449) |
[21] | Abraham F F,Walkup R,Gao H,Duchaineau M,de La Rubia T D,Seager M.PNAS,2002; 99:5783 |
[22] | Doyama M,Kogure Y,Nozaki T,Kato Y.Phys Res,2003; 202B:64 |
[23] | Liang Y C,Chen J X,Chen M J,Tang Y L,Bai Q S.Chin J Chem Phys,2007; 20:649 |
[24] | Ianmura T,Takezawa N,Taniguchi N.Ann CIRP,1992; 41:121 |
[25] | Johnson R A.Phys Rev,1988; 3713:3924 |
[26] | Johnson R A.Phys Rev,1989; 39B:12554 |
[27] | Rafii-Tabar H,Chirazi A.Phys Rep,2002; 365:145 |
[28] | Nose S A.J Chem Phys,1984; 81:511 |
[29] | Hoover W G.Phys Rev,1985; 31A:1695 |
[30] | Zimmerman J A,Kelchner C L,Klein P A,Hamilton J C,Foiles S M.Phys Rev Lett,2001; 87:165507 |
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