在不同烧结气氛下制备了Y和YF3掺杂钛酸钡材料，借助于XRD、SEM、XRF和阻温测试分析仪，研究了烧结气氛对Y和YF3掺杂钛酸钡材料结构和性能的影响. 研究结果表明，低氧分压气氛可促进Y和YF3掺杂钛酸钡材料的烧结，晶粒长大，而且这二种掺杂钛酸钡材料都是n型半导体. 经过氩气气氛烧结的Y掺杂钛酸钡材料PTCR效应较弱，而对在氩气气氛中烧结的0.3mol%YF3掺杂钛酸钡材料却观察到了较好的PTCR效应，这种效应的产生可能与F元素取代O位而导致材料的价控半导有关.
Positive Temperature Coefficient of Resistivity (PTCR) materials based on Yttrium and Yttrium Fluoride (YF3) doped Barium titanate (BaTiO3) ceramics ere prepared in different sintering atmospheres, respectively. The effects of sintering atmospheres on the microstructure, property and mechanism of substitution of doped BaTiO3 ceramics were investigated by the means of XRD, SEM, XRF and R-T measuring instrument. Sintering in a low oxygen partial atmosphere canincrease the densities of Y and YF3 doped BaTiO3 and make grain particle grow. Both Y and YF3 doped BaTiO3 ceramics are n-type semiconductor in which Y substitutes A-site and F substitutes O-site. Sintered in a argon atmosphere, Y doped BaTiO3 exhibited little PTCR effect, however, an anomalous PTCR effect was observed when 0.3mol% YF3doped BaTiO3 ceramics was fired in Argon atmosphere. This phenomenon may be explained by a new O site substitution mechanism
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