直流磁控反应溅射制备IrO2薄膜

无机材料学报, 2000, 15(4): 733-739. doi: 10.3321/j.issn:1000-324X.2000.04.027

直流磁控反应溅射制备IrO2薄膜

王世军 ^1, , 丁爱丽 ^2, , 仇萍荪 ^3, , 何夕云 ^4, , 罗维根 ^5,

1.中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050

2.中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050

3.中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050

4.中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050

5.中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050

关键词：氧化铱薄膜 , 直流磁控反应溅射 , 热退火

IrO2 Thin Films Deposited by DC Magnetron Sputtering Method

Keywords： IrO2 thin film , DC magnetron reactive sputtering , thermal annealing

为研究氧化铱(IrO2)对PZT铁电薄膜疲劳性能的影响，利用直流(DC)磁控反应溅射(sputtering)工艺成功地在SiO2/Si(100)衬底上制得了高度取向的IrO2薄膜. 并在其上制成PZT铁电薄膜. 讨论了溅射参数(溅射功率、Ar/O2比、衬底温度)以及退火条件对氧化铱薄膜的结晶、取向和形态的影响.

Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O2) and growth temperatureand annealing conditions on the crystalline nature and morphology of IrO2 thin films was discussed.

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