偏铌酸铅陶瓷低频内耗的研究

无机材料学报, 2000, 15(5): 827-832. doi: 10.3321/j.issn:1000-324X.2000.05.010

偏铌酸铅陶瓷低频内耗的研究

贺连星 ^1, , 李承恩 ^2, , 陈廷国 ^3, , 刘卫 ^4, , 朱震刚 ^5, , 水嘉鹏 ^6,

1.中国科学院上海硅酸盐研究所，上海 200050

2.中国科学院上海硅酸盐研究所，上海 200050

3.中国科学院上海冶金所，上?海 200050

4.中国科学院内耗与固体缺陷开放实验室，合肥 230031

5.中国科学院内耗与固体缺陷开放实验室，合肥 230031

6.中国科学院内耗与固体缺陷开放实验室，合肥 230031

基金项目: 国家高技术研究发展计划(863计划)(863-715-006-0060)

关键词：内耗 , 偏铌酸铅陶瓷 , 畴壁 , 氧空位

Low-Frequency Internal Friction of Lead Metaniobate Ceramics

Keywords： internal friction , lead metaniobate ceramics , domain walls , oxygen vacancy

用低频倒置扭摆对改性偏铌酸铅?铁电陶瓷的内耗进行了研究. 在新加工的样品中发现了六个内耗峰，分别位于70C(P1峰)、90C(P2峰)、200C(P3峰)、260C(P4峰)、430C(P5峰)和510C(P6峰)处. 对引起P3、P1、P2和P4峰的物理机制进行了详细探讨. 分析结果表明，P3峰的本质是一宽化的Debye弛豫内耗峰，相应的激活能和指前因子分别为1.01eV和2.410-14s. ?它源于氧空位与畴壁的相互作用. P1、P2和P4峰与试样的切割加工密切相关，可归结为点缺陷与位错的交互作用.

The internal friction Q-1 of Lead Metaniobate ceramics was investigated by inverted torsion pendulum. Six internal friction peaks, with their location around 70C(P1), 90C(P2), 200C(P3), 260C(P4), 430C(P5) and 510C(P6), respectively, were observed in a freshly-worked PbNb2O6 ceramics. The mechanisms for P3, P1, P2 and P4 were analyzed in detail. P3 is a broadened Debye relaxation peak in nature, and its corresponding activation energy and pre-exponential factor are 1.01eV and 2.510-12s, respectively. This peak is attributed to the interaction between domain walls and oxygen vacancies. P1, P2, and P4 are clearly related to the working processes. They can be caused by the interaction between dislocations and point defects.

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