通过对Si(100)衬底上C60薄膜在不同温度处理后的AES谱线研究发现， C60分子于973K时开始分解，生成石墨类碳碎片，1073K时C原子已与Si原子键合形成SiC，1123K时C60分子全部分解. 这一研究结果对解释C60分子促进金刚石成核将起到重要作用.
A series of AE spectra for “as-deposited” C60 films on Si(100) substrate annealed at different temperatures were studied. C60 molecules begin to decompose at 973K and result in a graphite-like carbon fragmentation. When C60 film is heated to 1073K, silicon and carbon will bond to form silicon carbide. At 1123K all C60 molecules will decompose. The results may take place an important role for the explanation of C60 molecule promoting diamond nucleation.
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