无压烧结制备氧氮化硅陶瓷

无机材料学报, 2001, 16(1): 165-168. doi: 10.3321/j.issn:1000-324X.2001.01.028

无压烧结制备氧氮化硅陶瓷

徐鑫 ^1, , 黄莉萍 ^2, , 葛其明 ^3, , 符锡仁 ^4,

1.中国科学院上海硅酸盐研究所,

2.中国科学院上海硅酸盐研究所,

3.中国科学院上海硅酸盐研究所,

4.中国科学院上海硅酸盐研究所,

关键词：氧氮化硅 , 无压烧结 , 显微结构 , 力学性能

Pressureless Sintering of Si2N2O

以β-Si3N4和SiO2粉末为原料，以MgAl2O4为烧结添加剂，通过无压烧结制备出致密的Si2N2O陶瓷材料. 所得材料由柱状Si2N2O颗粒和少量-Si3N4颗粒复合组成，研究了烧结温度对材料显微结构的影响，发现材料的断裂大部分是穿晶断裂.

Dense Si2N2O ceramics were pressurelessly sintered from β-Si3N4 and SiO2 powders with 4wt% MgAl2O4 additive. Microstructures of this material consisted of rod-like Si2N2O grains and a little amount of β-Si3N4. The effect of sintering temperatures on the microstructures was studied. Crack deflection profile suggested transgranular fracture of the material.

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[11]	center Pressureless Sintering of Si2N2O

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