采用射频等离子体增强化学气相沉积(CVD)+负偏压热丝辅助方法直接在Si(100)衬底上制备了多晶C3N4薄膜.X射线衍射测试表明,薄膜同时含有α-和β-C3N4晶相以及未知结构,没有观测到石墨衍射峰.利用扫描电子显微镜观测到线度约2μm、横截面为六边形的β-C3N4晶粒.纳米压痕法测得薄膜的硬度达72.66 Gpa.
Polycrystalline carbon nitride thin films were prepared on Si (100) by hot filament assisted rf plasma-enhanced chemical vapor deposition with negative bias methods. X-ray diffraction (XRD) spectra indicate that the obtained CN films contain both crystallineβ-C3N4 andβ-C3N4,and a presently unknown structure. Some crystalline particles of 1～2μm in size with hexagonal cross section exist in the polycrystalline carbon nitride film. The maximum hardness of C3N4 thin film is 72.66GPa.
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