以六甲基二硅胺烷((Me3Si)2NH)(Me:CH3)为原料,用双反应室激光气相合成纳米粉体装置制备了纳米Si/C/N复相粉体.研究了纳米Si/C/N复相粉体在不同基体中8.2～12.4GHz的微波介电特性,纳米粉体介电常数的实部(ε')和虚部(ε″)随频率增大而减小,介电损耗(tgδ=ε″/ε′)较高.纳米Si/C/N复相粉体中的SiC微晶固溶了大量的N原子,在纳米Si/C/N复相粉体中形成大量的带电缺陷,极化弛豫是吸收电磁波的主要原因.
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