PECVD法淀积氟碳掺杂的氧化硅薄膜表征

无机材料学报, 2001, 16(6): 1169-1173. doi: 10.3321/j.issn:1000-324X.2001.06.022

PECVD法淀积氟碳掺杂的氧化硅薄膜表征

丁士进 ^1, , 张庆全 ^2, , 张卫 ^3, , 王季陶 ^4,

1.复旦大学电子工程系,

2.复旦大学电子工程系,

3.复旦大学电子工程系,

4.复旦大学电子工程系,

关键词：等离子体增强化学气相淀积 , 氟碳掺杂的氧化硅薄膜 , X射线光电子能谱 , 傅立叶变换红外光谱 , 折射率

Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD

以正硅酸乙酯(TEOS)和八氟环丁烷(C4Fs)为原料,采用等离子体增强化学气相淀积(PECVD)方法制备了氟碳掺杂的氧化硅薄膜(SiCOF).样品的X射线光电子能谱(XPS)和傅立叶变换红外光谱(FTIR)分析表明薄膜中含有Si-F、Si-O、C-F、C-CFx、CF2等构型.刚淀积的薄膜的折射率约为1.40.对暴露在空气中以及在不同温度下退火后薄膜的折射率做了测量,并对其变化机理进行了讨论,同时表明了理想的淀积温度应是300°C.

参考文献

[1]	Morgen M, Ryan E T, Zhao J H, et al. Annu. Rev. Mater. Sci. 2000, 30: 645-680.
[2]	Wang P F, Ding S J, Zhang W, et al. Chin. Phys. Lett. 2000, 17 (12): 912-914.
[3]	王鹏飞,丁士进,张卫,等.微电子学,2000,30(5):347-350.
[4]	Ding S J, Wang P F, Zhang W, et al. Chin. Phys. 2000, 9 (10): 778-782.
[5]	Ding S J, Wang P F, Wan X G, et al. Mater. Sci. Eng. B, at press
[6]	丁士进,王鹏飞,张卫,等.光谱学与光谱分析.2001,21:(已录用).
[7]	Wang P F, Ding S J, Zhang D W, et al. Appl. Phys. A, 2001, 72, 721-724.
[8]	Ding S J, Wang P F, Zhang D W, et al. J. Phys. D: Appl. Phys. 2001, 34: 155-159.
[9]	Ding S J, Chen L, Wan X G, et al. Mater. Chem. Phys. 2001, 71: 125-130.
[10]	Lucovsky G, Yang J, Chao S S, et al. Phys. Rev. B, 1983, 28: 3225-3230.
[11]	He L, Inokuma T, Kurata Y, et al. J. Non-Cryst. Solids, 1995, 185: 249-261.
[12]	Lucovsky G, Wong C K, Pollard W B. J. Non-Cryst. Solids, 1983, 59＆60: 839-842.
[13]	Yoshimaru M, Koizumi S, Shimokawa K, J. Vac. Sci. Technol. A, 1999, 17: 425-432.
[14]	Durrant S F, Castro S G C, Bolivar-Marinez L E, et al. Thin solid films, 1997, 304: 149-156.
[15]	Agraharam S, Hess D W, Kohl P A, J. Vac. Sci. Technol. A, 1999, 17: 3265-3271.
[16]	Cho W S, Oh Y S, Kim C S, J. Alloys. Comp. 1999, 285: 255-259.
[17]	Kakana-Georgieva A, Marinova T, Noblanc O, Thin Solid Films, 1999, 337: 180-183.
[18]	丁士进,张卫,王鹏飞,等.功能材料,2000,31(5):452-455.
[19]	Usami T, Shimokawa K, Yoshimaru M. Jpn. J. Appl. Phys. 1994, 33: 408-412.
[20]	Song Y, Sakurai T, Kishimoto K, et al. Thin Solid Films, 1998, 334: 92-97.
[21]	Hah S M, Aydil E S. J. Vac. Technol. A, 1996, 14: 2062-2070.
[22]	Hrubesl L W. Mater. Res. Soc. Symp. Proc. 1995, 381: 267-270.
[23]	Jin C M, Luttmer J D, Smith D M, et al. MRS Bulletin, 1997, 22 (10): 39-42.
[24]	Carter K R, Cha H J, Dipietro R A. Mater. Res. Soc. Symp. Proc. 1995, 351: 79-82.
[25]	Xu Y H, Tsai Y P, Tu K N, et al. Appl. Phys. Le~. 1999, 75: 853-855.
[26]	Yoo W S, Swope R, Mordo D. Jpn. J. Appl. Phys. 1997, 36: 267-275.

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PECVD法淀积氟碳掺杂的氧化硅薄膜表征

Characterization of Fluorine and Carbon-Doped Silicon Oxide Film Deposited by PECVD

参考文献