首次采用粉末冶金法在大成分范围内制备了赝两元合金(PbTe)1-x(SnTe)x(x=0~1),并对其电学性能进行了系统地研究.实验发现:经550℃烧结后,随合金中SnTe摩尔分数x增大,合金的最大Seebeck系数值减小.当摩尔分数x≤0.6时,最大Seebeck系数所对应的温度逐渐升高;摩尔分数x>0.6时基本不变.当摩尔分数x=0.6时电导率达最大值.经高温烧结后两参数值也有类似的变化规律,但摩尔分数>0.2的各合金Seebeck系数值高于550℃烧结后的合金,电导率降低.从而得出:烧结温度对赝两元合金(PbTe)1-x(SnTe)x的综合电学性能影响不大.
参考文献
[1] | Yoneda S, Ohta E, Kaibe H T, et al. Journal of Crystal Growth, 1999, 204: 229-232. |
[2] | Breschi R, Fano V. Journal of Materials Science, 1985, 20: 2990-2996. |
[3] | Nugraha, Tamura W, Itoh O, et al. Journal of Crystal Growth, 2001, 222: 38-43. |
[4] | Orihashi M, Noda Y, Chen LD, et al. Journal of Physics and Chemistry of Solids, 2000, 61: 919-923. |
[5] | Rowe D M, Bhandari C M. Applied Physics Letter, 1985, 47 (3): 255-257. |
[6] | 高敏,张景韶,Rowe D M.温差电转换及其应用,第一版.北京:兵器工业出版社,1996.181. |
[7] | Rogacheva E, Dzyubenko N. 2000 IEEE, 18th International Conference On Thermoelectrics, 1999. 226-229. |
[8] | Bouad N, Marin-Ayral R M, Tedenac J C. 2000 IEEE, 18th International Conference On Thermo electrics, 1999. 138-141. |
[9] | Zhao X B, Zhu T J, Hu S H, et al. Journal of Alloys and Compounds, 2000, 306: 303-306. |
[10] | Shi J L. Journal of Materials Research, 1999, 14 (4): 1378-1388. |
[11] | Kafalas J A, Mariano A N. Science, 1964, 143: 952. |
[12] | Dimmock J O, Melngailis I, Strauss A J. Physical Review Letters, 1966, 16 (26): 1193-1196. |
[13] | Damodara Das V, Bahulayan C. Jpn. Journal of Applied Physics, 1995, 34: 534-538. |
[14] | Middleton A E, Scanlon W W. Physical Review, 1953, 92 (2): 219-226. |
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