C-H-O和C-H-N体系生长金刚石膜的气相化学模拟

无机材料学报, 2004, 19(2): 404-410. doi: 10.3321/j.issn:1000-324X.2004.02.024

C-H-O和C-H-N体系生长金刚石膜的气相化学模拟

戚学贵 ^1, , 陈则韶 ^2, , 王冠中 ^3, , 廖源 ^4,

1.中国科学技术大学工程科学学院,合肥,230027

2.中国科学技术大学工程科学学院,合肥,230027

3.中国科学技术大学物理系,合肥,230026

4.中国科学技术大学物理系,合肥,230026

基金项目: 国家自然科学基金(59976083)

关键词：化学气相沉积 , 金刚石膜 , 气相化学 , 相图

Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films

数值模拟了C-H-O和C-H-N体系的气相化学,构建了含氧和含氮气源化学气相沉积金刚石膜的三元相图,探讨了加氧和加氮影响金刚石膜生长的途径.结果表明,甲基是金刚石生长主要的前驱基团,乙炔导致非金刚石碳沉积,原子氢刻蚀非金刚石碳.通过气相反应改变这些基团的浓度是加氧的一个重要作用途径,而加氮在改变这些基团浓度的同时,CN等含氮基团还强烈地参与了金刚石膜成核和生长的表面过程.

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C-H-O和C-H-N体系生长金刚石膜的气相化学模拟

Simulation of Gas Phase Chemistry in C-H-O and C-H-N Systems for Chemical Vapor Deposition Diamond Films

参考文献