光刻系统用氟化钙晶体的研究进展

1.中国科学院上海光学精密机械研究所,上海,201800

2.中国科学院上海光学精密机械研究所,上海,201800

3.中国科学院上海光学精密机械研究所,上海,201800

4.中国科学院上海光学精密机械研究所,上海,201800

5.中国科学院上海光学精密机械研究所,上海,201800

基金项目: 上海市科技发展基金(022261053)

Research and Development Status of Calcium Fluoride Crystals Used in Lithography System

解释了氟化钙晶体能被应用在光刻系统和掀起研究热潮的原因,概述了氟化钙晶体的研究和发展现状,指出了目前氟化钙晶体在研究和发展过程中要解决的重要问题和措施,最后对氟化钙晶体在光刻系统中的发展前景作了展望.

[1]	Ewald Morsen, Schott ML GmbH, et al. Nikkei Electronics Asia, 2000, 5: 102-105.
[2]	Kiril A. Pandelisev. Semiconductor Fabtech, 2001, 10 (15): 123-126.
[3]	Pandelisev K A. US Patent, Patent No.6071339, 2000.
[4]	Mizugaki, et al. US Patent, Patent No. 6123764, 2000.
[5]	Sakuma, et al. United States Patent, Patent No. 6332922, 2002.
[6]	Axel Engel, et al. SPIE, 2001, (4346): 1183-1189.
[7]	Pandelisev K A. US Patent, Patent No.5993540, 1999.
[8]	Stockbarger D C. J Opt Soc Amer, 1949, (39): 731.
[9]	Yindra Y, Filip Y. Akad Nauk SSSR, 1965. 137-142.
[10]	John H. Burnett, et al. "Intrinsic Birefringence in 157nm Materials " 2nd International Symposium on 157nm Lithography, May 14-17,2001,Dana Point, Calif.
[11]	Guggenheim H. J Appl Phys, 1961, (32): 1337.
[12]	Pastor R S, Arita K. US Patent No 3935302, 1976.
[13]	Pastor A S. US Patent No 4110080, 1978.
[14]	Pastor A S, Pastor R S, Arita K, US Patent 4379733, 1983.
[15]	Mouchovski I T, et al. Mat Res Innovat, 1999. 138-144.
[16]	Ko J M, Tozawa S. Journal of crystal growth, 2001, (222): 243-248.
[17]	Pandelisev K A, "Purification and Crystal Growth of CaF2 Having Superior Properties ". 2nd International Symposium on 157nm Lithography, May 14-17,2001,Dana Point, Calif.
[18]	Pandelisev K A, Motakef S. 157nm SEMATECH Technical Date Review, .Dec 11-13,Oriando, Fla.
[19]	Kiril A. Pandelisev. Semiconductor International, 2002-2-1.
[20]	Aaron Hand. Semiconductor International, 2002-2-1.

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