铌表面固体粉末包埋渗硅研究

无机材料学报, 2005, 20(3): 764-768. doi: 10.3321/j.issn:1000-324X.2005.03.041

铌表面固体粉末包埋渗硅研究

李明 ^1, , 宋力昕 ^2, , 乐军 ^3, , 宋学平 ^4, , 郭占成 ^5,

1.中国科学院上海硅酸盐研究所特种无机材料研究发展中心,上海,200050

2.中国科学院上海硅酸盐研究所特种无机材料研究发展中心,上海,200050

3.中国科学院上海硅酸盐研究所特种无机材料研究发展中心,上海,200050

4.中国科学院过程工程研究所,北京,100080

5.中国科学院过程工程研究所,北京,100080

关键词：渗硅 , 涂层 , 铌 , 二硅化铌

Microstructure and Mechanism of Pack Siliconizing on Niobium

采用固体粉末包埋渗硅工艺在铌表面制备了二硅化铌涂层,研究了渗硅过程中Si沉积的反应机理和二硅化铌涂层的结构.结果表明:涂层由单相的二硅化铌组成;Si的输运和沉积主要依靠硅的低氟化物S讯2完成.

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铌表面固体粉末包埋渗硅研究

Microstructure and Mechanism of Pack Siliconizing on Niobium

参考文献