碳纳米管(CNTs)具有低的阈值电场和高的发射电流密度,是一种性能优良的场发射阴极材料,在平板显示领域具有潜在的应用价值.CNTs的场发射性能直接关系到CNTs场发射阴极在未来的实际应用.本文从Fowler-Nordheims场发射理论出发,阐述了CNTs的场发射机制;详细论述了各种因素包括CNTs的定向性、层结构、几何特征、阵列密度、系统真空度以及CNTs与基底材料之间的键合等对CNTs场发射特性的影响;介绍了CNTs场发射特性在平板显示领域中的实际应用.
参考文献
| [1] | Sarangi D,Arpaoui I,Bonard J M.Physica B,2002,323 (1-4):165-167. |
| [2] | De Heer W A,Chatelain A,Ugarte D.Science,1995,270 (17):1179-1180. |
| [3] | Chernnozatonskii L A,Gulyaev Y V,Kosakovskaja Z J,et al.Chem.Phys.Lett.,1995,233 (1-2):63-68. |
| [4] | Lijima S.Helical Microtubules of Graphitic Carbon.1991,358:56-58. |
| [5] | Baughman R H,Zakhidov A A,De Heer W A.Science,2002,297 (5582):787-792. |
| [6] | Jonge N D,Lamy Y,Schoots K,et al.Nature,2002,420 (28):393-395. |
| [7] | Xie S S,Li W Z,Pan Z W,et al.Journal of Physics and Chemistry of Solids,2000,61 (7):1153-1158. |
| [8] | Adessi Ch,Devel M.Phys.Rev.B,2000,62 (20):R13314-R13317. |
| [9] | Choi J H,Choi S H,Han J H,et al.J.Appl.Phys.,2003,94 (1):487-490. |
| [10] | Jo S H,Tu Y,Huang Z P,et al.Appl.Phys.Lett.,2003,82 (20):3520-3522. |
| [11] | Milne W I,Teo K B K,Chhowalla M,et al.Diamond and Related Materials,2003,12 (3-7):422-428. |
| [12] | Fowler R H,Nordheim L W.Electron Emission in Tense Field.Proc.R.Soc.,London:Imperial CollegePress,1928. |
| [13] | Langer L,Bayot V,Grivei E,et al.Phys.Rev.Lett.,1996,76 (3):479-482. |
| [14] | 成会明,碳纳米管制备、结构、物性及其应用.北京:化学工业出版社,2002. |
| [15] | Collins P G,Zettl A.Phys.Rev.,1997,B55:9391-9399. |
| [16] | Dean K A,Allmen V P,Chalamala B R.J.Vac.Sci.Technol.,1999,B17 (6):1959-1969. |
| [17] | Caroll D L,Redlich P,Ajayan P M,et al.Phy.Rev.Lett.,1997,78 (14):2811-2814. |
| [18] | 李志兵,许宁生,邓少芝.物理,2004,33(10):705-707 |
| [19] | Wang Q H,Setlur A A,Lauerhaas J M,et al.Appl.Phys.Lett.,1998,72 (22):2912-2913. |
| [20] | Bower C,Zhou O,Zhu W,et al.Mat.Res.Soc.Symp.Proc.,2000. |
| [21] | Sohn J I,Lee S,Song Y H,et al.Current Applied Physics,2001,1 (1):61-65. |
| [22] | Wang Y H,Lin J,Huan C H A.Thin Solid Films,2002,405 (1-2):243-247. |
| [23] | Umnov A G,Matsushita T,Endo M,et al.Chem.Phys.Lett.,2002,356 (3-4):391-397. |
| [24] | Bonard J M.Adv.Mater.,2001,13 (3):184-189. |
| [25] | Filip V,Nicolaescu D,Tanemura M,et al.Ultramicroscopy,2001,89 (1-3):39-49. |
| [26] | Nilsson L,Groerling O,Emmenegger C,et al.Appl.Phys.Lett.,2000,76 (15):2071-2073. |
| [27] | Allmen P V,Fonseca L R C,Ramprasad R.Phys.Stat.Sol(b),2001,226 (1):107-113. |
| [28] | Musatov A L,Kiselev N A,Zakharov D N,et al.Appl.Surf.Sci.,2001,183 (1-2):111-119. |
| [29] | Wei Y,Xie C,Dean K A,Coll B F.Appl.Phys.Lett.,2001,79 (27):4527-4529. |
| [30] | Wang Z L,Gao R P,Heer W A D.Appl.Phys.Lett.,2002,80 (5):856-858. |
| [31] | Chen Y,David T S,Guo L P.Appl.Phys.Lett.,2000,76 (17):2469-2471. |
| [32] | Zhu W,Bower C,Zhou O,et al.Appl.Phys.Lett.,1999,75 (6):873-875. |
| [33] | Feng Y T,Deng S Z,Chen J,et al.Ultramicroscopy,2003,95:93-97. |
| [34] | Colbert D T,Smalley R E.Carbon,1995,33 (7):921-924. |
| [35] | Saito Y,Hamaguchi K,Mizushima R,et al.Appl.Surf.Sci.,1999,146 (1-4):305-311. |
| [36] | Bonard J M,Frédéric M,Stockli T,et al.Ultramicroscopy,1998,73 (1-4):7-15. |
| [37] | Lim S C,Choi Y C,Shin Y M,et al.J.Vac.Sci.Technol.,2001,A19 (4):1786-1795. |
| [38] | Dean K A,Chalamala B R.Appl.Phys.Lett.,1999,75 (19):3017-3019. |
| [39] | Monteiro O R,Mammana V P,Salvadori M C,et al.Applied Physics A,2000,71:121-124. |
| [40] | Kim J M,Choi W B,Lee N S,et al.Diamond and Related Materials,2000,9 (3-6):1184-1189. |
| [41] | Lee N S,Chung D S,Han I T,et al.Diamond and Related Materials,2001,10 (2):265-270. |
| [42] | Jung J E,Jin Y W,Choi J H,et al.Physica B,2002,323 (1-4):71-77. |
| [43] | 刘卫华,朱长纯,王琪琨,等.电子学报,2002,30(5):694-696. |
| [44] | Li Y K,Zhu C C,Liu X G.Diamond and Related Materials,2002,11 (11):1845-1847. |
| [45] | Wen J G,Huang Z P,Wang D Z,et al.J.Mater.Res.,2001,16:3246-3253. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%