采用溶胶-凝胶和射频磁控溅射相结合的方法制备了PZT铁电薄膜.用溶胶-凝胶法制备一层PZT薄膜作为籽晶层,在衬底PZT(seed layer)/Pt/Ti/SiO2/Si上用射频磁控溅射过量10%Pb的Pb(ZrxTi1-x)O3(x=0.3)陶瓷靶生长厚500nm的PZT铁电薄膜.采用在450℃预退火,575℃后退火的快速分级退火方法对PZT铁电薄膜进行热处理.PZT铁电薄膜获得了较好的热释电性能,热释电系数、介电常数、介电损耗和探测度优值因子分别为p=2.3×10-8C·cm-2.K-1,ε=500,tanδ=0.02,Fd=0.94×10-5Pa-0.5.
参考文献
| [1] | Achard H,Macó H,Peccoud L.Microelectronic Engineering,1995,(29):19-28. |
| [2] | Boerasua M Pereiraa,Gomesa M J M,et al.Journal of the European Ceramic Society,2004,(24):1633-1636. |
| [3] | Ma J H,Meng X J,Sun J L,et al.Applied Surface Science,2005,(240):275-279. |
| [4] | Liu Weiguo,Jongsoo Ko,Zhu Weiguang.Infrared Physics & Technology,2000,(41):169-173. |
| [5] | Chen Shi,Liu Meidong,Li churong,etal.Thin solid films,2000,(375):288-291. |
| [6] | Mardare C C,Joanni E,Mardare A I,et al.Appiled Surface Science,2005,(243):113-124. |
| [7] | Dong Heon Kang,Kim Kyung Woo,Sung Yong Lee,et al.Material Chemistry and Physics,2005,(90):411-416. |
| [8] | Jong Soo Ko,Liu Weiguo,Zhu Weiguang,et al.Solid-State Electronnics,2002,(46):1155-1161. |
| [9] | Sum l l,Tan O K,Liu Weiguo,et al.Microelectronic Engineering,2003,(66):738-744. |
| [10] | Hwang Jae-Seob,Kim Woo Sik,Hyung-Ho Park,et al.Sensors and Actuators A,2005,(117):137-142. |
| [11] | Sum Ling Ling,Ooi Kiang Tan,Liu Wei Guo,et al.Infrared Physics & Technology,2003,(44):177-182. |
| [12] | Verardi P,Craciun F,Dinescu M,et al.Material Science and Engineering B,2005,(118):39-43. |
| [13] | Sun L L,Liu Weiguo,Tan O K,et al.Material Science and Engineering B,2003,(99):173-178. |
| [14] | Park Chul-Ho,Son Young-Gook,Won Mi-Sook.Microchemical Journal,2005,(80):201-206. |
| [15] | Jong Soo Ko,Liu Weiguo,Zhu Weiguang.Sensors and Actuators A,2001,(93):117-122. |
| [16] | Pael A,Obhi J S.GEC J.of Research,1995,(12):141-145. |
| [17] | Liu Weiguo,Ban Jiang,Jong Soo Ko,et al.Integrated ferroelectrics,2001,(35):47-54. |
| [18] | Liu Weiguo,Jong Soo Ko,Zhu Weiguang.Integrated ferroelectrics,2001,(35):127-135. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%