立方氮化硼(c-BN)具有优异的物理和化学性质,在力学、光学和电子学等方面有着广泛的应用前景.自上世纪80年代开始,低压沉积c-BN薄膜的研究迅速发展,到90年代中期达到高潮,随后进展缓慢,c-BN薄膜研究转入低潮.近年来,c-BN薄膜研究在几方面取得了突破,如获得与衬底粘附良好、厚度超过1μm的c-BN厚膜;成功实现了c-BN单晶薄膜的异质外延生长;此外,在c-BN薄膜力学性质和过渡层微结构研究方面也取得了进展.本文主要评述最近几年c-BN薄膜研究在以上几方面取得的最新进展.
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