由于取向生长技术可以显著地提高压电陶瓷的性能,并且不会降低材料的居里温度,故压电陶瓷的晶粒取向生长技术已成为研究的热点.本文分别从定向凝固技术、多层晶粒生长技术、模板晶粒生长技术和反应模板晶粒生长技术等四个方面,归纳和分析了近年来压电陶瓷晶粒取向生长技术的研究进展,并对压电陶瓷晶粒取向生长技术今后的研究和发展提出一些建议.
参考文献
[1] | Uchino K.Ferroelectric Devices,London and New York:Marcel Dekker Inc,2000. |
[2] | Jaffe B,Cook W R,Jaffe H.Piezoelectric Ceramics,New York:Academic Press,1971. |
[3] | Park S E,Shrout T R.J.Appl.Phys.,1997,82 (4):1804-1811. |
[4] | Service R E.Science,1997,275 (3):1878-1878. |
[5] | 张孝文,陈克丕(ZHANG Xiao-Wen,et al).无机材料学报(Journal of Inorganic Materials),2002,17(3):385-391. |
[6] | 孙士文,潘晓明,李东林,等(SUN Shi-Wen,et al).无机材料学报(Journal of Inorganic Materials),2004,19(3):541-545. |
[7] | 王评初,孙士文,潘晓明,等(WANG Ping-Chu,et al)无机材料学报(Journal of Inorganic Materials),2004,19(5):1195-1198. |
[8] | Messing G L,Trolier-Mckinstry S,Sabolsky E M,et al.Critical Reviews in Solid State and Materials Science,2004,29 (2):45-96. |
[9] | Kimura T.J.Ceram.Soc.Jpn.,2006,114 (1):15-25. |
[10] | Neurgaonkar R R,Oliver J R,Cory W K,et al.Ferroelectrics,1994,160 (2):265-267. |
[11] | Zhao L L,Gao F,Zhang C S,et al.Journal of Crystal Growth,2005,276 (3-4):446-452. |
[12] | Saito Y,Hisaaki T,Tani T,et al.Nature,2004,432 (11):84-87. |
[13] | Tani T,Kimura T.Advances in Applied Ceramics,2006,105 (1):55-63. |
[14] | Lotgering F K.J.Inorg.Nucl.Chem.,1959,9 (1):113-115. |
[15] | 张孝文.硅酸盐学报,1983,11(2):141-148. |
[16] | Sun S W,Pan X M,Wang P C.Appl.Phys.Lett.,2004,84 (4):574-576. |
[17] | Sabolsky E M,James A R,Kwon S,et al.Appl.Phys.Lett.,2001,78 (17):2551-2553. |
[18] | Kelly J,Leonard M,Tantigate C,et al.J.Am.Ceram.Soc.,1997,80 (4):957-959. |
[19] | Viehland D,Li J F,Amin A.J.Appl.Phys.,2002,92(12):3985. |
[20] | 李永祥,杨群保,曾江涛,等.四川大学学报,2005,48(2):230-235. |
[21] | 曾江涛,李永祥,杨群保,等.电子材料与元件,2004,23(11):66-70 |
[22] | Jing X Z,Li Y X,Yang Q B,et al.Ceramics International,2004,30 (7):1889-1893. |
[23] | Jing X Z,Li Y X,Yang Q B,et al.Journal of the European Ceramic Society,2005,25 (12):2727-2730. |
[24] | Sabolsky E M,Trolier-Mckinstry S,Messing G L,et al.J.Appl.Phys.,2003,93 (7):4072-4080. |
[25] | Yilmaz H,Messing G L,Trolier-McKinstry S.Journal of Electroceramics,2003,11 (3):207-215. |
[26] | Yilmaz H,Trolier-McKinstry S,Messing G L.Journal of Electroceramics,2003,11 (3):217-226. |
[27] | Suvaci E,Oh K S,Messing G L,et al.Acta Materialia,2001,49 (11):2075-2081. |
[28] | Suvaci E,Messing G L.J.Am.Ceram.Soc.,2000,83(8):2041 2048. |
[29] | Seabaugh M M,Messing G L,Vaudin M D.J.Am.Ceram.Soc.,2000,83 (12):3109-3116. |
[30] | Kimura T,Sakuma Y,Murata M.Journal of the European Ceramic Society,2005,25 (12):2227-2230. |
[31] | Kimura T,Miura Y,Fuse K.Int.J.Appl.Ceram.Technol.,2005,2 (1):15-23. |
[32] | Sugawara T,Nomura Y,Kimura T,et al.J.Ceram.Soc.Jpn.,2001,109 (10):897-900. |
[33] | Muramatsu H,Kimura T.Journal of Electroceramics,2004,13 (1-3):531-535. |
[34] | Tani T.J.Korean Phys.Soc.,1998,32 (S2):1217 1220. |
[35] | Seno Y,Tani T.Ferroelectrics,1999,224 (1-4):793-800. |
[36] | Tani T.J.Ceram.Soc.Jpn.,2006,114 (5):363-370. |
[37] | Takeuchi T,Tani T,Saito Y.Jpn.J.Appl.Phys.,1999,38 (9B):5553-5556. |
[38] | Tani T,Itahara H,Xia C T,et al.Journal of Materials Chemistry,2003,13 (8):1865-1867. |
[39] | Kimura T,Takahashi T,Tani T,et al.J.Am.Ceram.Soc.,2004,87 (8):1424-1429. |
[40] | Cross E.Nature,2004,432 (11):24-25. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%