采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜,并利用Ar微波等离子体对CNTs薄膜进行了改性处理,研究了改性前后CNTs的微观结构和场发射性能.高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明,等离子体改性明显改变了CNTs的微观结构,形成了大量的管壁结构缺陷、纳米级突起和"针形"尖端;场发射测试结果表明,CNTs经Ar等离子体改性处理后开启电场较改性前略有增大,等离子体改性10rain的CNTs薄膜表现出最佳的场发射J-E特性,阈值电场由改性前的3.12V/μm降低到2.54V/μm,当电场强度为3.3V/μm时,场发射电流密度由改性前的18.4mA/μm2>增大到60.7mA/cm2>.对Ar微波等离子体改性增强CNTs薄膜场发射性能的机理进行了分析.
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