采用脉冲激光沉积(PLD)技术,在MgO(100)基片上制备了b轴取向的BaTi2O5薄膜,研究了基片温度(Tsub)、氧分压(Po2)等沉积工艺对薄膜结构的影响.结果表明: BaTi2O5薄膜的物相及取向性都随基片温度和氧分压的改变而变化,薄膜呈现(710)或(020)取向生长,最佳的PLD沉积条件为Tsub=700℃和Po2=12.5Pa.在该条件下,BaTi2O5薄膜表现出明显的b轴取向,薄膜表面平整光滑,结晶良好,晶粒呈棒状交叉分布,结合紧密.
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