在溶胶-凝胶反应过程中,用乙烯基三乙氧基硅烷(TEVS)代替部分正硅酸乙酯(TEOS),通过两者共水解缩合反应制备乙烯基修饰的SiO2膜,并通过BET、TG、NMR、以及接触角测量仪对所制备的材料进行表征.结果表明:修饰后的二氧化硅膜仍保持微孔结构,且孔径集中分布在0.5～0.7 nm之间.由于部分亲水表面羟基被疏水乙烯基团所代替,乙烯基修饰的SiO2膜疏水性能得到明显提高,并且随着TEVS加入量的增加,疏水性能逐渐增强.
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