采用粒径为1 μm的SiC颗粒,用挤压铸造法制备出体积分数为45 %的SiCP/2024Al复合材料,研究了位错对高体积分数SiCP/2024Al时效行为的影响.结果表明,复合材料中的高密度位错可以湮灭大量的淬火空位,这在一定程度上抑制了GP区的析出.但是,高密度位错的存在降低了其它析出相的热扩散激活能,促进了析出相形核;还能为原子的管道扩散提供通道,促进了溶质原子的扩散,加速析出相的长大,在宏观上表现为对时效行为的促进,使峰时效提前.高密度的位错为强烈依赖于位错等缺陷形核的θ′和S′相提供许多优先形核的场所,使复合材料中的形核密度增加,同时使析出相的尺寸减小,所以复合材料中的析出相呈现细小弥散的分布特点.
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