探索了 SiC-B4C复合膜的热等离子体 PVD(TPPVD)法快速制备,研究了 SiC-B4C复合膜的力学性能和热电性能.实验结果表明:以 SiC和 B4C超细粉为原料的热等离子体PVD(TPPVD)法是快速制备 SiC-B4C复合膜的有效方法.通过控制 SiC和 B4C粉末的供给,可以获得具有层状结构的 SiC-B4C致密优质复合膜,最大沉积速度达356 nm/s,高于常规 PVD和 CVD法两个数量级.膜的硬度随 B4C含量增加而增大,最大显微维氏硬度达到 35 GPa.SiC-B4C复合膜的电阻率和 Seebeck系数随 B4C含量增加而减小.最大 Seebeck系数为 550 μVK-1,在 973 K时最大功率因子达到640 μWm-1K-2,是SiC烧结体的21倍.
参考文献
| [1] | 陈跃,沈百令,张永振,等. SiC颗粒增强铝基复合材料/半金属材料干摩擦磨损特性 [J]. 复合材料学报, 2002, 19(3): 56-60. |
| [2] | 曲寿江,耿林,曹国剑,等. 挤压铸造法制备可变形SiCP/Al复合材料的组织与性能 [J]. 复合材料学报, 2003, 20(3): 69-73. |
| [3] | 刘伯威, 潘进, 樊毅, 等. SiC颗强韧化MoSi2复合材料[J]. 复合材料学报, 2002, 19(1): 59-63. |
| [4] | Haghiri A M, Rousseaux F, Kebabi B, et al. A 100 nm pat-terned X-ray mask technology based on amorphous SiC membranes [J]. J Vac Sci Technol B, 1990, 8: 1565-1569. |
| [5] | Yano M, Aozasa M, Kawano K. Coating of SiC on stainless steel using biased plasma CVD [J]. J Ceram Soc Jpn, 1995, 103: 724-729. |
| [6] | Chin J, Ohkawa T. In situ regeneration of fusion reactor first walls [J]. Nuclear Technology, 1977, 32: 115-124. |
| [7] | Murakami Y, Takase H, Shinya K, et al. Power plant design study of a high aspect ratio Tokamak using a SiC composite structure [J]. Fusion Engineering and Design, 1998, 41: 501-509 |
| [8] | Masri P.Silicon carbide and silicon carbide-based structures[J]. Surface Science Reports, 2002, 48: 1-51. |
| [9] | Ishiyama S, Fukaya K, Eto M. Synthesis and fabrication te-chnique of SiC/SiC thermo elements [J]. Key Eng Mater, 1999, 159-160: 423-427. |
| [10] | Kato K, Asai K, Okamoto Y, et al. Temperature and porosity dependence of the thermoelectric properties of SiC/Ag sintered materials [J]. J Mater Res, 1999, 14(5): 1752-1759. |
| [11] | Koumoto K. Thermoelectric properties of CVD boron carbide [J]. Amer Ceram Soc Bulletin,1994, 73(10): 84-87. |
| [12] | Ulrich S, Ehrhardt H, Schwan J, et al. Subplantation effect in magnetron sputtered superhard boron carbide thin films[J]. Diamond and Related Materials, 1998, 7: 835-838. |
| [13] | Pai C H, Koumoto K, Yangida H. Effect of sintering additives on the thermoelectric properties of SiC ceramics [J]. Nippon Seramikkusu Kyokashi Gakujutsu Ronbunshi, 1989, 97(10): 1170-1175. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%