根据Si3N4颗粒增强体的结构特点及等温化学气相法(ICVI)的工艺特点,对Si3N4颗粒增强Si3N4复合材料的致密化过程进行了数值模拟.用球形孔隙模型表征Si3N4颗粒增强体的结构特征,用传质连续方程表征先驱体在预制体中的浓度分布.为了检验模型的准确性和适用性,进行了相应的实验验证.模拟结果与实验结果具有相似的致密化规律,预测的渗透时间和孔隙率与实验结果均十分接近,表明本文中建立的数学模型可以较好地表征Si3N4P/Si3N4复合材料的ICVI过程.
参考文献
[1] | Barta J,Manela M,Fische R.Si3N4 and Si2N2O for high performance radomes[J].Materials Science and Engineering,1985,71(5):265-272. |
[2] | Grieco M J,Worthing F L,Schwartz B.Silicon nitride thin films from SiCl4 plus NH3:Preparation and properties[J].J Electrochem Soc,1991,115(5):525-531. |
[3] | Tai Nyan-Hwa,Chou Tsu-wei.Analytical modeling of chemical vapor infiltration in fabrication of ceramic composites[J].Journal of American Ceramic Society,1989,72(5):414-420. |
[4] | 侯向辉,李贺军,李克智,等.单向碳/碳复合材料CVI致密化模拟研究[J].复合材料学报,1999,16(2):129-134.Hou Xianghui,Li Hejun,Li Kezhi,et al.Modeling of CVI processing for fabrication of unidirectional carbon-carbon composites[J].Acta Materiae Compositae Sinica,1999,16(2):129-134. |
[5] | Kulik V I,Kulik A V,Ramm M S,et al.Modeling of SiC-matrix composite formation by isothermal chemical vapor infiltration[J].Journal of Crystal Growth,2004,266(5):333-339. |
[6] | 刘浩斌.颗粒尺寸分布与堆积理论[J].硅酸盐学报,1991,19(4):164-171.Liu Haobin.Particle size distribution and packing theories[J].Journal of the Chinese Ceramic Society,1991,19(4):164-171. |
[7] | 楼顺天,陈生潭,雷虎民.Matlab 5.x程序设计语言[M].西安:西安电子科技大学出版社,2000:193-210. |
[8] | 曾庆丰.SiC-C/SiC复合材料优化设计[M].西安:西北工业大学,2004:45-57 |
[9] | 李汝辉.传质学基础[M].北京:北京航空学院出版社,1987:85-131. |
[10] | Noboru Yoshikawa.Modeling of chemical vapor infiltration rate considering a pore size distribution[J].Journal of American Ceramic Society,2002,85(6):1485-1491. |
[11] | Bhatia S K,Perlmutter D D.A random pore model for fluidsolid reaction[J].AICHE Journal,1981,27(5):247-254. |
[12] | 夏少武.活化能及其计算[M].北京:高等教育出版社,1993:231-240. |
[13] | 贾绍义,柴诚敬.化工传质与分离过程[M].北京:化学工业出版社,2001:331-337. |
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