采用泥浆预涂层反应法在C/SiC复合材料表面制备Si/SiC涂层.通过理论计算和实验确定了制备致密不开裂涂层的泥浆配比; 研究了埋粉烧结和气相硅真空反应烧结2种不同烧结气氛对Si/SiC涂层微观形貌和成分的影响; 比较了单涂层和双涂层2种不同涂层制备方法对C/SiC复合材料基底结构的影响; 用SEM观察涂层形貌,用XRD分析涂层成分与晶体结构.结果表明: 泥浆中C:Si(质量比)在1∶1.25左右制备的涂层不开裂; 埋粉烧结制备的涂层成粉,而气相硅真空反应烧结制备的涂层致密且与基底结合好; 单涂层法制备涂层后基底材料致密度高,而双涂层法制备涂层后基底仍然保持多孔结构.
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