在1600℃不同真空度下,采用热蒸发硅的方法,在石墨基板和聚丙烯腈(PAN)炭纤维两种碳源基体原位生长具有一定取向的碳化硅纳米晶须--垂直于石墨片表面森林状和试管刷状碳化硅纳米晶须阵列.通过X射线衍射及场发射扫描电镜,发现晶须为3C-SiC,直径约100 nm,长度约50μm.炭纤维表面的产物顶端多为针尖状,而石墨片表面的产物多为六方棱柱状.因其纳米尺寸效应,在380nm波长的光激发下,所制晶须在波长为468 nm附近出现光致发光峰.透射电镜、多点衍射电子衍射图表明,所制得的3C-SiC晶须为单晶,其生长方向为3C-SiC的[111]方向.基于反应过程中硅熔体与碳源分离的事实,讨论了3C-SiC晶须阵列生长的气固反应机理.
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