在1500℃、1600℃、1650℃和1750℃氩气中保温3 h,使Fe-Si在石墨基板上熔化并敷展,分别在熔层表面获得SiC颗粒层、SiC颗粒与晶须混合层、SiC晶须层和SiC腾空薄膜.XRD分析确定所有产物均为3C-SiC;TEM和SAED分析表明,SiC晶须为3C-SiC单晶,生长方向为[111].基于上述结果,提出不同温度下C与熔体中的Si经不同反应路径,生成不同形貌SiC的反应机理:低温时(≤1500℃),Fe提高了熔体中C的饱和溶解度,以液-固(LS)反应生成SiC颗粒;较高温度时(1500～1750 ℃),借助Fe的催化作用,以气-液-固(VLS)机理生成SiC晶须;更高温度时(≥1750℃),气-液-固(VLS)变得无序,生成SiC腾空连续膜.
参考文献
| [1] | Holmes J D,Johnston K P,Christopher D R.Control of thickness and orientation of solution-grown silicon nanowires[J].Science,2000,287:1471-1473. |
| [2] | Siergiej R R,Clarke R C,Sriram S,et al.Advances in SiC materials and devices:An industrial point of view[J].Materials Science and Engineering B,1999,61-62:9-17. |
| [3] | Ohtani N,Takahashi J,Katsuno M,et al.Development of large single-crystal SiC substrates[J].Electronics and Communications in Japan,1997,81(6):8-18. |
| [4] | Bauer M,Kador L.Microscopic heterogeneities in the electrical properties of SiC as studied with single-molecule spectroscopy[J].J Phys Chem B,2003,107(51):14301-14305. |
| [5] | Chen K W,Yu Y H,Lei Y M,et al.Non-rutherford backscattering studies of SiC/SIMOX structures[J].Appl Surf Sci,2001,184:178-182. |
| [6] | Garces J M,Kuperman A,Millar D M,et al.Synthetic inorganic materials[J].Adv Mater,2000,12(23):1725-1735. |
| [7] | Moon J,Caballero A C,Hozer L,et al.Fabrication of functionally graded reaction infiltrated SiC-Si composite by threedimensional printing (3DPTM) process[J].Mater Sci and Eng A,2001,298:110-119. |
| [8] | Zhan Guodong,Kuntz J D,Duan Renguan,et al.Spark-plasma sintering of silicon carbide whiskers (SiCw) reinforced nanocrystalline alumina[J].J Am Ceram Soc,2004,87:2297-2300. |
| [9] | 王新华,Yoshi da T.SiC/C薄膜的制备及其力学性能[J].复合材料学报,2005,22(1):74-78.Wang Xinhua,Yoshi da T.Preparation of SiC/C film and its mechanical properties[J].Acta Materiae Compositae Sinica,2005,22(1):74-78. |
| [10] | Li Y B,Xie S S,Zhou X P,et al.Large-scale synthesis of β-SiC nanorods in the arc-discharge[J].J Cryst Growth,2001,223(1/2):125-128. |
| [11] | Deng S Z,Wu Z S,Zhou J.Synthesis of silicon carbide nanowires in a catalyst-assisted process[J].Chem Phys Lett,2002,356(5/6):511-514. |
| [12] | Li J C,Lee C C,Lee S T,et al.Direct growth of β-SiC nanowires from SiOx thin films deposited on Si (100) substrate[J].Chem Phys Lett,2002,355(1/2):147-150. |
| [13] | Tang C C,Fan S S,Dang H Y,et al.Growth of SiC nanorods prepared by carbon nanotubes confined reaction[J].J Cryst Growth,2000,210(4):595-599. |
| [14] | 张洪涛,徐重阳.Sol-gel法制备纳米碳化硅晶须的研究[J].电子元件与材料,2000,19(3):9-12.Zhang Hongtao,Xu Zhongyang.Preparation of nanometer β-SiC crystal whisker by sol-gel process[J].Electronic Components & Materials,2000,19(3):9-12. |
| [15] | Fu Qiangang,Li Hejun,Shi Xiaohong,et al.Microstructure and growth mechanism of SiC whiskers on carbon/carbon composites prepared by CVD[J].Materials Letters,2005,59(19/20):2593-2597. |
| [16] | 王启宝,郭梦熊.稻壳SiC晶须合成的热力学基础及VLS催化生长机理[J].人工晶体学报,1997,26(1):33-39.Wang Qibao,Guo Mengxiong.Thermodynamics base of synthesizing SiC whiskers from rice hulls and the growth mechanism by VLS catalytic process[J].Journal of Synthetic Crystals,1997,26(1):33-39. |
| [17] | Hofman D H,Müller M H.Prospects of the use liquid phase techniques for the growth of bulk silicon carbide crystals[J].Mater Sci and Eng B,1999,61/62:29-39. |
| [18] | Zhou W M,Yang Z X,Zhu F,et al.SiC/SiO2 nanocables and nanosprings synthesized by catalyst-free method[J].Physica E,2006,31(1):9-12. |
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