在InP(001)基衬底上用分子束外延方法生长了InAs纳米结构材料,通过改变生长方式,得到了InAs量子点和量子线.根据扫描电镜和透射电镜观测结果的分析,认为衬底旋转时浸润层三角形状的台阶为InAs量子线的成核提供了优先条件,停止衬底旋转时InAlAs缓冲层沿[110]方向分布的台阶促使InAs优先形成量子点.讨论了量子点和量子线的形成机理.
参考文献
| [1] | Dieter Bimberg, Marius Grundmann and Nokolai N. Ledentsov, Quantum dot heterostructures, (Germany,John Wiley & Sons, 1998)p.3 |
| [2] | E.Kapon, D.M.Hwang, R.Bhat, Stimulated emission in semiconductor quantum wire heterostructures.Phys. Rev. Lett., 63, 430(1989) |
| [3] | C.W.Snyder, B.G.Orr, D.Kesler, Effects of strain on surface morphology in highly strained InGaAs film,Phys. Rev. Lett., 66, 3032(1991) |
| [4] | S.Guha, A.Madhukar, K.C.Rajkaumar, Onset of incoherency and defect introduction in initial stages of molecular beam epitaxical growth of highly strained InxGa1-xAs on GaAs (100), Appl. Phys. Lett., 57,2110(1990) |
| [5] | D.Leonard, M.Krishnamurthy, S.Fafard, Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs, J.Vac. Sci. Technol. B, 12, 1063(1994) |
| [6] | G.C.Solomon, J.A.Trezza, J.S.Harris, Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs, Appl. Phys. Lett., 66, 991(1995) |
| [7] | D.Lenoard, D.Pond, P.M.Petroff, Critical layer thickness of self-assembled InAs islands on GaAs,Phys. Rev. B, 50, 11689(1994) |
| [8] | A.Ponchet, A.Le Corre, H.L'Haridon, B.Lambert, S.Salaün, Relationship between self-organization and size of InAs islands on InP (001) grown by gas-source molecular beam epitaxy, Appl. Phys. Lett., 63, 1850(1993) |
| [9] | S.Fafard, Z.Wasilewski, J.McCaffrey, S.Raymond, S.Charbonneau, InAs self-assembled quantum dots on InP by molecular beam epitaxy, Appl. Phys. Lett., 67, 991(1995) |
| [10] | WEN Lishi(闻立时), The physical basis of solid material interface study (固体材料界面研究的物理基础), (Beijin, Scientific press, 1991) p.154 |
| [11] | J.Tersoff, R.M.Vromp, Shape transition in growth of strained islands: spontaneous formation of quantum wires, Phys. Rev. Lett., 70, 2782(1994) |
| [12] | S.Fafard, Z.Wasilewski, J.McCaffrey, S.Raymond, S.Charbonneau, InAs self-assembled quantum dots on InP by molecular beam epitaxy, Appl. Phys. Lett., 68,991(1996) |
| [13] | J.Brault, M.Gendry, G.Grenet, G.Hollinger, Y.Desières, T.Benyattou, Role of buffer surface morphology and alloying effects on the properties of InAs nanostructure grown on InP (001), Appl. Phys. Lett., 73, 2932(1998) |
| [14] | S.Ruvimov, P.Weiner, K.Scheerschmidt, Structural characterization of (In, Ga)As quantum dots in a GaAs Matrix, Phys. Rev. B, 51, 14766(1995) |
| [15] | B.W.Wessels, Morphological stability of strained-layer semiconductors, J. Vacuum Sci. Technol. B, 15,1056(1997) |
| [16] | A.Ponchet, Corre Le, H.L'Haridon, B.Lambert, S.Salaün, Relationship between self-organization and size of InAs islands on InP (001) grown by gas-source molecular beam epitaxy, Appl. Phys. Lett., 67, 1850(1995) |
| [17] | D.Leonard, M.Krishnamurty, C.M.Reaves, S.P. Denbaars, P.M.Petroff, Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces, Appl. Phys. Lett., 63, 3203(1995) |
| [18] | Q.H.Xie, P.K.Kobayashi, T.R.Ramachandran, Strained coherence InAs quantum box islands on GaAs (100):size equalization vertical self-organization and optical properties, J.Vac. Sci.Technol. B, 14, 2203(1996) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%