用气相输运法制备了准一维结构的NbSe3单晶,并研究了其剩余电阻率与杂质的关系.在电子扫描电镜(SEM)下观测了NbSe3单晶的表面形貌,未见亚微米尺寸的缺陷.NbSe3单晶的电阻温度与温度的关系(ρ-T)曲线表明,NbSe3样品分别在Tp1=145 K和Tp2=57 K经历两次Peierls相变,剩余电阻比RRR高于200.根据对不同样品的ρ-T曲线的研究指出,以前的文献用剩余电阻比估计杂质浓度ni的方法是一个错误,并提出了改进措施.
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