使用在连续介质中建立的二维流场数学模型,模拟计算了在用HFCVD方法生长金刚石薄膜过程中影响气体温度分布的多个沉积工艺参数,研究了气体的速度和体密度的空间分布.结果表明,在优化工艺参数条件下,高温热丝的热阻塞作用导致气体状态参数的不均匀空间分布;在热丝附近气体的速度大而靠近反应腔体侧壁处小;热丝附近处气体体密度减小而靠近冷反应腔体侧壁处增加,采用绝热或高等温边界的反应腔管道壁可以消除气体的热绕流现象,有利于大面积金刚石薄膜的快速均匀生长.
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