在InP(001)基衬底上用分子束外延方法生长InAs纳米结构材料,通过衬底的旋转与否及混合生长模式,得到了两种InAs量子点和量子线,并研究了量子点、线的光学性质.结果表明,两种方式都可生长出较强发光的量子点(线);由量子点排列构成的量子线的光致发光光谱呈现出多峰结构,分析和理论计算表明这是InAs量子线上各量子点在垂直方向上不同高度分布和非连续性而造成的.
参考文献
| [1] | C.W.Snyder, B.G.Orr, D.Kesler, Effects of Strain on Surface Morphology in Highly Strained InGaAs Film,Phys. Rev. Lett., 66, 3032(1991) |
| [2] | S.Guha, A.Madhukar, K.C.Rajkaumar, Onset of Incoherency and Defect Introduction in Initial Stages of Molecular Beam Epitaxical Growth of Highly Strained InxGa1-xAs on GaAs (100), Appl.Phys. Lett., 57,2110(1990) |
| [3] | D.Leonard, M.Krishnamurthy, S.Fafard, Molecular-Beam Epitaxy Growth of Quantum Dots from Strained Coherent Uniform Islands of InGaAs on GaAs, J.Vac. Sci.Technol. B, 12, 1063(1994) |
| [4] | G.C.Solomon, J.A.Trezza, J.S.Harris, Substrate Temperature and Monolayer Coverage Effects on Epitaxial Ordering of InAs and InGaAs Islands on GaAs, Appl. Phys.Lett., 66, 991(1995) |
| [5] | D.Lenoard, D.Pond, P.M.Petroff, Critical Layer Thickness of Self-Assembled InAs Islands on GaAs,Phys. Rev. B, 50, 116892(1994) |
| [6] | J.Brault, M.Gendry, G.Grenet, G.Hollinger, Y.Desieres, T.Benyattou, Role of Buffer Surface Morphology and Alloying Effects on the Properties of InAs Nanostrusture Grown on InP(001), Appl. Phys. Lett., 73,2932(1998) |
| [7] | WU Guangming(武光明), LI Yuefa(李月法), JIA Rui(贾瑞), Fabrication and Characterization of InAs SelfOrganized Quantum Dots(Wires), Chinese Journal of Materials Research(材料研究学报), 16(5), 490(2002) |
| [8] | J.F.Carlin, R.Houdre, R.Rudra, InAs Self-Assembled Quantum Dots on InP by Molecular Beam Epitaxy,Appl.Phys. Lett., 59, 3018(1991) |
| [9] | F.Heinrichsdorff, A.Krost, P. Wener, Self-Organization Processes of InGaAs/GaAs Quantum Dots Grown by Metaorganic Chemical Vapor Deposition, Appl. Phys. Lett., 68, 3284(1996) |
| [10] | ZENG Jingyan(曾谨言), Quantum Mechanics (量子力学)(Beijing, Scientific Press, 1998)p.51 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%