研究了Pb3O4对(Co,Nb)掺杂SnO2压敏材料电学性质的影响.当Pb3O4的含量从0.00增加到0.75%(摩尔分数,下同)时,(Co,Nb)掺杂SnO2压敏电阻的击穿电压从426 V/mm迅速减小到160 V/mm,40 Hz时的相对介电常数从1240迅速增加到2760.这说明Pb3O4是调控SnO2压敏材料击穿电压和介电常数的敏感添加剂.晶界势垒高度测量表明,在实验范围内Pb的含量对势垒高度的影响很小.随着Pb含量的增加,SnO2的晶粒尺寸的迅速长大是击穿电压迅速减小和介电常数迅速增大的主要原因.对样品的复阻抗进行了测量,发现未掺杂Pb的样品具有最低的晶界电阻,而掺杂0.50%Pb3O4的样品具有最高的晶界电阻.提出了一个修正的缺陷势垒模型,指出了替代Sn的受主不应当处于晶界上,而应处于耗尽层的Sn的晶格位置.
参考文献
| [1] | T.K.Gupta, Application of Zinc Oxide Varistors, J.Am. Ceram. Soc, 73, 1817(1990) |
| [2] | P.R.Emtage, The Physics of Zinc Oxide Varistors, J.Appl. Phys., 48, 4372(1977) |
| [3] | J.G.Fagan, V.R.W.Amarakoon, Reliability and Reproducibility of Ceramic Sensors: part Ⅲ, huminity sensors, Am. Ceram. Soc. Bull., 72, 119(1993) |
| [4] | J.A.Varela, O.J.Whittemore, E.Longo, Pore Size Evolution during Sintering of Ceramic Oxide, Ceram. Int.,166, 177(1990) |
| [5] | S.A.Pianaro, P.R.Bueno, E.Longo, A New SnO2-Based Varistor System, J.Mater. Sci. Lett., 14, 692(1995) |
| [6] | C.P. Li, J.F.Wang, W.B.Su, Nonlinear Electrical Properties of Cobalt Doped SnO2·Ni2O3·Nb2O5 Varistors,Eur. Phys. J.AP., 16, 3(2001) |
| [7] | C.P. Li, J.F.Wang, W.B.Su, Investigation of Electrical Properties of SnO2·Co2O3·Sb2O3 Varistor System,Physica B, 307, 1(2001) |
| [8] | C.P. Li, J.F.Wang, W.B.Su, Nonlinear Electrical Properties of SnO2·Li2O·Ta2O5 Varistors, Ceram. Intern,28, 521(2002) |
| [9] | J.F.Wang, Y.J.Wang, W.B.Su, Novel (Zn,Nb)-Doped SnO2 Varistors, Mater. Sci.Eng. B, 96, 8(2002) |
| [10] | S.A.Pianaro, P.R.Bueno, E.Longo, Effect of Bi2O3 Addition on the Microstructure and Electrical Properties of the SnO2-CoO-Nb2O5 Varistor Sytem, J.Mater. Sci. Lett., 16, 634(1997) |
| [11] | E.R.Leite, A.M.Nascimento, P.R.Bueno, The Influence of Sintering Process and Atmosphere on the Non Ohmic Properties of SnO2-Based Varistor, J.Mater.Sci.Mater.Electr., 10, 321(1999) |
| [12] | M.R.C.Santos, P.R.Bueno, E.Longo, J.A.Varela, Effect of Oxidizng and Reducing Atmosphere on the Electrical Properties of Dense SnO2-Based Varistors, J.Eur. Ceram. Soc., 21, 161(2001) |
| [13] | F.Stucki, F.Greuter, Key Role of Oxygen at Zinc Oxide Varistor Grain Boundaries, Appl. Phys.Lett., 57,446(1990) |
| [14] | P.R.Bueno, E.R.Leite, M.M.Oliveira, Role of Oxygen at the Grain Boundary of Metal Oxide Varistors: A Potential Barrier Formation Mechanism, Appl. Phys. Lett., 79, 48(2001) |
| [15] | T.K.Gupta, W.G.Carlson, A Grain-Boundary Defect Model for Instability/Stability of ZnO Varistor,J.Mater. Sci., 20, 3487(1985) |
| [16] | P.R.Bueno, S.A.Pianaro, E.C.Pereila, Investigation of the Electrical Properties of SnO2 Varistor System Using Impedance Spectroscopy, J.Appl. Phys., 84, 3700(1998) |
| [17] | H.R.Philpp, L.M.Levenson, Tunneling of Photoexcited Carriers in Metal Oxide Varistors, J.Appl. Phys., 46,3206(1975) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%