介绍了一种制备非致冷红外探测器阵列的新方法,此方法避免了使用传统的微电子机械系统(MEMS)工艺来加工微桥.研究了如何在Si基片表面形成ZnO膜层网格状结构的方法.ZnO纳米粉末和PLZT厚膜采用改进的溶胶-凝胶法制备.表征了ZnO纳米粉末的表面形貌和PLZT厚膜的相组成,测量了 PLZT-8/53/47厚膜的铁电性和热释电性.结果表明,ZnO纳米粉末的粒径为40～70 nm,PLZT-8/53/47厚膜为纯钙钛矿相,其主结晶方向与底电极一致.PLZT-8/53/47厚膜具有优良的热释电性能,其热释电系数p为8.21×10-8C/(cm2·℃),而矫顽场较小,25℃时+Ec为32.0 kV/cm,40℃时+Ec仅为27.8 kV/cm.
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