欢迎登录材料期刊网

材料期刊网

高级检索

提出了5类实现Si基激光器的增益介质材料,即具有强三维量子限制效应的纳米晶Si(nc-Si)薄膜,掺稀土发光中心Er的si基纳米材料,具有预期人工改性的高纯体单晶Si,基于子带跃迁的SiGe/Si量子级联结构,以及具有受激Raman散射特性的SOI(silieon on insulator)光波导结构.评述了这些材料在近3~5年中在高效率光致发光(PL),电致发光(EL)、光增益和受激光发射特性方面所取得的重要进展,并简要讨论了今后发展中存在的一些问题.

参考文献

[1] G.Masini,L.Colace,G.Assanto,Si baseel optoelectronics for communications,Mater.Sci.Eng,B89,2(2002)
[2] PENG Yingcai,ZHAO Xinwei,FU Guangsheng,WANG Yinglong,Study and prospect of Si-based optoelectronics,Chinese Journal of Quantum Electronics,21(3),273(2004)(彭英才,Zhao X W,傅广生,王英龙,Si基光电子学的研究与展望,量子电子学报,21(3),273(2004))
[3] L.C.Kimerling,L.D.Negro,S.Saini,Y.Yi,D.Ahn,S.Akiyama,Monolithic silicon microphotonics,Topics in Applied Physics Series:Silicon Photonics,Springer,94,89(2004)
[4] PENG Yingcai,ZHAO Xinwei,FU Guangshneg,Progress of Si-based nanocrystalline silicon luminescent materials,Chinese Science Bulletin,47(15),1233(2002)
[5] M.J.Chen,J.L.Yen,J.Y.Li,J.F.Chang,S.C.Tsai,Stimulated emission in a nanostructured silicon pn junction diode using current injection.Appl.Phys.Lett.,84(12),2163(2004)
[6] H.Rong,A.Liu,R.Jones,O.Cohen,D.Hak,R.Nicolaescu,A.Fang,M.Paniccia,An all-silicon Raman laser,Nature,433,292(2005)
[7] YU Jinzhong,Semiconductor Optoelectronic Technologies(Beijing,Chemical Inclnstry Press,2003)P.157(余金中,半导体光电子技术,(北京,化学工业出版社,2003)P.157)
[8] L.Ravesi,L.D.Negro,C.Mazzoleni,G.Franzo,F.Priolo,Optical gain in silicon nanocrystals,Nature,408,440(2000)
[9] L.D.Negro,M.Cazzanelli,N.Daldosso,Z.Gaburro,L.Pavesi,F.Priolo,D.Pacifici,G.Franzo,Stimutated emission in plasma-enhanced chemical vapor deposited silicon nanocrystals,Physica E,16,297(2003)
[10] PENG Yingcai,ZHAO Xinwei,FU Guangsheng,Selfassembled growth of ordered Si-based nanometer luminescent materials,Chinese Journal of Materials Reseach,18(5),449(2004)(彭英才,Zhao X.W.,傅广生,晶粒有序Si基纳米发光材料的自组织化生长,材料研究学报,18(5),449(2004))
[11] T.Feng,H.Yu,M.Dicken,J.R.Heach,H.A.Atwater,Probing the size and density of silicon nanocrystals in nanocrystal memory device applications,Appl.Phys.Lett.,86(3),033103(2005)
[12] R.J.Walters,P.G.Kik,J.D.Casperson,H.A.Atwater,R.Lindstedt,M.Giorgi,G.Bouianoff,Silicon optical nanocrystal memory,Appl.Phys.Lett.,85(13),2622(2004)
[13] M.Kapoor,K.Singh,P.K.Pandey,Dependence of photoluminescence efficiency on size in silicon nanostructures;Phenomenological Investigations,Physica E,23,183(2004)
[14] K.Toshikiyo,M.Fujii,S.Hayashi,Enhanced optical properties of Si nanocrystals in planar microcavity,Physica E,17,451(2003)
[15] K.Tcehikiyo,M.Fujii,S.Hayashi,Enhanced optical properties of Sil-xGex alloy nanocrystals in a planay microcavity,J.Appl.Phys.,93(4),2181(2003)
[16] D.Amans,S.Callard,A.Ganaire,J.Joseph,G.Ledoux,F.Huisken,Optical properties of a microcavity containing silicon nanocrystals,Mater.Sci.Eng.,B101,305(2003)
[17] S.L.Jaiswal,J.T.Simpson,S.P.Withrow,C.W.White,P.M.Norris,Design of a nanoscale silicon laser,Appl.Phys.,A77,57(2003)
[18] P.Bellegrino,B.Garrido,C.Garcia,R.Ferre,J.A.Moreno,J.R.Morante.Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivationl,Physica E,16,42(2003)
[19] B.H.Kim,C.H.Cho,T.W.Kim,N.M.Park,G.Y.Sung,S.J.Park,Photoluminescence of silicon quantum dots in silicon nitride grown by NH3 and SiH4,Appl.Phys.Lett.,86(9),091908(2005)
[20] A.Irrera,D.Pacifici,M.Miritello,G.Franzo,F.Priolo,F.Iacona,D.Sanfilippo,G.D.Stefano,P.G.Fallica,Excitation and de-excitation properties of silicon quantum dots under electrical pumping,Appl.Phys.Lett.,81(10),1866(2002)
[21] A.Irrera,D.Pacifici,M.Miritello,G.Franzo,F.Priolo,F.Iacona,D.Sanfilippo,G.D.Stefano,P.G.Fallica,Elctroluminescence properties of light emitting devices based on silicon nanocrystals,Physica E,16,395(2002)
[22] J.Valenta,N.Lalic,J.Linnros,Eleetroluminescence of single silicon nanocrystals,Appl.Phys.Lett.,84(9),1459(2004)
[23] L.Canham,Gaining light from silicon,Nature,408,411(2000)
[24] R.J.Walters,G.I.Bourianoff,H.A.Atwater,Field-effectelectroluminescence in silicon nanocrystals,Nature Materials,4,143(2005)
[25] J.Linnros,Nanocrystals brighten transistors,Nature Materials,4,117(2005)
[26] M.A.Green,J.Zhao,A.Wang,P.J.Reece,M.Gal,Efficient silicon light-emitting diodes,Nature,410,805(2001)
[27] J.Zhao,M.A.Green,A.Wang,Hight-efficiency optical emission,detection,and copling using silicon diodes,J.Appl.Phys.,92(6),2977(2002)
[28] T.Trupke,J.Zhao,A.Wang,R.Corkish,M.A.Green,Very efficient light emission from bulk crystalline silicon,Appl.Phys.Lett.,82(18),2996(2003)
[29] M.A.Lourenco,M.S.A.Siddiqui,R.M.Gwilliam,G.Shao,K.P.Homewood.Efficient silicon light emitting diodes made by dislocation engineering,Physica E,16,376(2003)
[30] W.L.Ng,M.A.Lourenco,R.M.Gwilliam,S.Ledain,G.Shao,K.P.Homewood,An efficient room-temperature silicon-based light-emitting diode,Nature,410,192(2001)
[31] V.Kveder,M.Badylevich,E.Steinman,M.Seibt,W.Schroter,Room-temperature silicon light-emitting diodes based on dislocation luminescence,Appl.Phys.Lett.,84(12),2106(2004)
[32] PENG Yingcai,FU Guangsheng,WANG Yinglong,SHANG Yong,Approach to efficient luminescence of Erdoped Si-based nanomaterials,Chinese Journal of Synthetic Crystal,34(1),183(2005)(彭英才,傅广生,王英龙,尚勇,提高掺铒硅基纳米材料发光效率的探索,人工晶体学报,34(1),183(2005))
[33] A.J.Kenyon,C.E.Chrysson,C.W.Pitt,Luminecence from erbium-doped silicon nanocrystals in silica:Excitation mechanisms,Appl.Phys.,91(1),367(2002)
[34] C.Z.Ran,Y.Chen,F.C.Yuan,An effect of Si nanoparticles on enhancing Er3+electro luminescence in Si-rich SiO2:Er films,Solid State Communications,118,599(2001)
[35] X.W.Zhao,H.Isshiki,Y.Aoyagi,Formation and device application of Er-doped nanocrystalline Si using laser ablation,Mater.Sci.Eng.,B74,197(2000)
[36] S.Libertino,S.Coffa,M.Saggto,T.Sugano.,S.Komuro,Design and fabrication of integrated Si-based photoelectronic devices,Materials Science in Semiconductor Processing,3,375(2000)
[37] F.Iacona,D.Pacifici,A.Irrera,Elctroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,Appl.Phys.Lett.,81(17),3242(2002)
[38] D.Pacifici,A.Irrera,G.Franzò,Miritello,F.Iacona,F.Priolo,Erbium-doped Si nanocrystals:Optical properties and electroluminescent devices,Physica E,16,331(2003)
[39] M.E.Castagna,S.Coffa,M.Monaco,L.Caristia,A.Messina,R.Mangano,C.Bongiorno,Si-based materials and devices for light emission in silicon,Physica E,16,547(2003)
[40] L.Yang,T.Carmen,B.Min,S.M.Scan,K.J.Vahala,Erbium-doped and Raman microlasers on silicon chip fabricated by the sol-gel process,Appl.Phys.Lett.,86(9),091114(2005)
[41] L.Friedman,G.Sun,R.A.Soref,SiGe/Si THz luser based on transition between inverted mass light-hole and heavyhole subbands,Appl.Phys.Lett.,78(4),401(2001)
[42] G.Sun.R.A.Soref,Si-based quantum staircase terahertz lasers,Microelectronics Journal,34,391(2003)
[43] D.J.Paul,S.A.Lynch,R.Bates,Z.I.Konic,R.W.Kelsall,P.Harrison,Electroluminescence from Si/SiGe quantum cascade emitters,Physica E,16,309(2003)
[44] S.Mentese,L.Diehl,E.Miiller,Strain-compensated Si/Si0.2Ge0.8 quantum cascade structures grown on Si0.5Ge0.5 pseudo-substrates,Physica E,17,613(2003)
[45] H.K.Tsang,C.S.Wong,T.K.Liang,Optical dispersion,two-photon absorption and self-phase modulation in silicon waveguides at 1.5μm wavelength,Appl.Phys.Lett.,80(3),416(2002)
[46] T.K.Liang,H.K.Tsang,Role of free carriers from two-photon absorption in Raman amplifcation in silicon-on-insulator waveguides,Appl.Phys.Lett.,84(5),2745(2004)
[47] T.K.Liang,H.K.Tsang,Efficient Ranman amplification in silicon-on insulator waveguides,Appl.Phys.Lett.,85(16),3343(2004)
[48] H.Rong,A.Liu,R.Nicolaescu,M.Paniccia,Raman gain and nonlinear optical absorption measurements in a lowloss silicon waveguides,Appl.Phys.Lett.,85(12),2198(2004)
[49] H.Rong,R.Jones,A.Liu,O.Cohen,D.Hak,A.Fang,M.Paniccia,A continuous-wave Raman silicon laser,Nature,433,725(2005)
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%