采用Fe膜热硫化技术制备了具有不同比表面积和比晶界面积的FeS2薄膜,并测定其载流子浓度和电阻率,研究了FeS2薄膜表面和晶界等面缺陷对FeS2薄膜电学性能的影响.结果表明,表面和晶界两种面缺陷对FeS2薄膜的电学性能有类似的影响规律.在一定范围内,随着薄膜比表面积和比晶界面积的增大,载流子浓度提高而电阻率下降.面缺陷数量的变化可导致FeS2晶体中点缺陷数量、禁带中缺陷能级密度、不充分相变产物比例和相变应力水平的变化,从而导致载流子浓度和电阻率的变化.
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