采用熔融硅液相浸渍法制备了C/C-SiC复合材料,反应生成的SiC主要分布在层间孔和束间孔碳基体表面,少量分布在束内孔.1600℃渗硅2 h,硅化深度约为2～4 μm.由于液态硅与碳之间的润湿性很好,在碳基体表面形成了连续的SiC层,局部有粗大的多面碳化硅颗粒生成;讨论了细晶粒连续SiC层和SiC粗晶粒形成机理.由于SiC的加入,材料的抗氧化性能得到明显改善.
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