在高温高压条件下在hBN-Li3N-B体系中合成黑色立方氮化硼,研究了添加B的影响.结果表明,在合成的富硼cBN晶体中,没有其它杂质;体系中加入B使合成出的晶体晶形相更完整.过量的B进入晶体是晶体颜色由黄色变成黑色主要原因,硼的进入抑制了cBN晶体沿〈111〉方向生长而有利于沿〈100〉方向生长,由原来的板状晶体变成类八面体状或类球形晶体.用掺B的方法合成的黑色晶体比未掺B的黄色晶体具有更小的残余应力,破碎强度更高.
参考文献
| [1] | R.M.Wentzeovith,K.J.Chang,M.L.Cohen,Electronic and structural properties of BN and BP,Phys.Rev.B,34,1071(1986) |
| [2] | V.A.Gubanov,Z.W.Lu,M.Barry,Electronic structure of defects and impurities in Ⅲ-Ⅴ nitrides:Vacancies in cubic boron nitride,Phys.Rev.B,53,4377(1996) |
| [3] | ZHANG Tiechen,Study on various kinds of catalyst and growing character in synthesizing cubic boron nitride,Diamond & Abrasives Engineering,1,27 (2004).(张铁臣,立方氮化硼触媒多样性及生长特性研究,金刚石与磨具磨料工程,1,27(2004)) |
| [4] | B.P.Singh,V.L.Solozhenko,G.Will,On the low-pressure synthesis of cubic boron nitride,Diamond Relat.Mater.,4,1193(1995) |
| [5] | B.P.Singh,G.Nover,G.Will,High pressure phase transformations of cubic boron nitride from amorphous boron nitride using magnesium boron nitride as the catalyst,J.Cryst.Growth 152,143(1995) |
| [6] | L.S.Gladkaya,G.N.Kremkova,N.A.Bendeliani,The phase transition of hBN-cBN in the B-N-H-O system,Diamond Relat.Mater.,5,1440(1996) |
| [7] | ZHANG Tiechen,GUO Weili,ZHOU Guangtian,Impurity and coloration mechanism in cBN crystal,Chinese Jounal of High Pressure Physics,4(4),270 (1990).(张铁臣,郭伟力,邹广田,立方氮化硼的杂质及颜色,高压物理学报,4(4),270(1990)) |
| [8] | H.Sachdev,M.Strauβ,Investigation of the chemical reactivity and stability of c-BNP,Diamond Relat.Mater.,8,319(1999) |
| [9] | J.H.Edgar,in:J.Edgar (Ed.),Properties of Group Ⅲ Nitrides,Inspec,London,1994,p.7 |
| [10] | H.Sachdev,Influence of impurities on the morphology and Raman spectra of cubic boron nitride,Diamond Relat.Mater.,12,1275(2003) |
| [11] | J.A.Sanjurjo,E.Lopez-Cruz,Dependence on volume of the phonon frequencies and the ireffective charges of several Ⅲ-Ⅴ semiconductors,Phys.Rev.B,28,4579(1983) |
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