使用脉冲激光沉积(PLD)技术在Si(100)衬底上沉积钇稳定的氧化锆(YSZ)薄膜,用XRD分析薄膜的结晶取向,SEM和AFM观测薄膜表面形貌,研究了在200-650℃的不同衬底温度下薄膜的择优生长.结果表明:衬底温度较低的YSZ薄膜为非晶组织,衬底温度为300-500℃时YSZ晶粒以表面能低的(111)面首先择优生长,衬底温度超过550℃后晶粒活化能提高而使表面能较高的(100)晶粒择优生长.YSZ薄膜是典型的岛状三维生长模式,较高的衬底温度有利于原子在衬底表面迁移和重排结晶长大.同其它沉积技术相比,用PLD技术能在比较低的衬底温度下在Si(100)表面原位外延生长出较高质量的YSZ薄膜.
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