在5.0 GPa、1300-1800℃条件下不使用烧结助剂高压烧结制备了AlN陶瓷,研究了烧结温度和烧结时间对AlN高压烧结体微观结构和残余应力的影响.结果表明:高压烧结制备AlN陶瓷能有效地降低烧结温度和缩短烧结时间,在5.0 GPa/1400℃/50 min条件下AlN烧结体表现出穿晶断裂模式;将烧结温度提高到1800℃在AlN陶瓷中形成了单相多晶等轴晶粒组织;在5.0 GPa/1700℃/125 min条件下AlN陶瓷内部存在2.0GPa的残余压应力,其原因是在高压烧结AlN陶瓷出现了晶格畸变.
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