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以高纯钨粉、钛粉和TA2钛片为原料,分别采用液相烧结法和熔渗法制备了Ti含量为10%的W-Ti合金;测量了W-10%Ti合金的密度和杂质(C、N和O)含量,研究了不同方法制备的W-Ti合金的相组成和微观形貌.结果表明,熔渗法制备的W-Ti合金致密度达94%以上,相结构由含有较多富Ti相的固溶体β(W/Ti)组成;液相烧结的合金致密度为90%左右,组织相对均匀;两种方法制备的合金杂质(C、N和O)含量均较低.探讨了液相烧结制备W-10%Ti合金时固溶体扩散形成的机理.

参考文献

[1] R.J.Gutmann,T.P.Chow,A.E.Kaloyeros,Thermal stability of on-chip copper interconnect structures,Thin Solid Films,262(1-3),177(1995)
[2] G.Raghavan,C.Chiang,P.B.Anders,Diffusion of copper through dielectric films under bias temperature stress,Thin Solid Films,262(1-2),168(1995)
[3] A.G.Dirks,R.A.M.Wolters,A.J.M.Nellissen,On the microstructure property relationship of W-Ti-(N) diffusion barriers,Thin Solid Films,193-194,201(1990)
[4] H.Ramarotafika,G.Lemperiere,Influence of a d.c.substrate bias on the resistivity,composition,crystallite size and microstrain of W-Ti and W-Ti-N films,Thin Solid Films,266(2),267(1995)
[5] WANG Zanhai,WANG Xingming,CHU Maoyou,Preparation of W-Ti sputtering targets under inert atmosphere,Chinese Journal of Rare Metals,30(5),688(2006)(王赞海,王星明,储茂友,惰性气体热压法制备W/Ti合金靶材研究,稀有金属,30(5),688(2006))
[6] C.E.Wickersham,Jr.,J.E.Poole,J.J.Mueller,Particle contamination during sputter deposition of W-Ti films,J.Vac.Sci.Technol.A,10,1713(1992)
[7] Chifung Lo,Paul Gilman,Particle generation in W-Ti deposition,J.Vac.Sci.Technol.A,17(2),608(1999)
[8] Alireza Nouri,CHEN Xiaobo,YUN Cang,Synthesis of Ti-Sn-Nb alloy by powder metallurgy,Mater.Sci.Eng.,A,485,562(2008)
[9] C.E.Wickersham,Method of producing tungsten-titanium sputter targets and targets produced thereby,United States Patent,5234487(1993)
[10] J.Laszo.Kecskes,Ian W.Hall,Microstructural effects in hot-explosively-consolidated W-Ti alloy,Journal of Materials Processing Technology,94,247(1999)
[11] A.J.Dunlop,C.E.Waterman,T.Brat,Effects of titaniumtungsten target processing methods on defect generation during very large scale integrated device fabrication,Vac.Sci.Tech.A,10(2),305(1992)
[12] PAN Jinsheng,TONG Jianmin,TIAN Minbo,Materials Science Foundation (Beijing,Tsinghua University Press,1998) p.450(潘金生,仝健民,田民波,材料科学基础 (北京,清华大学出版社,1998) p.450)
[13] XIE Chengmu,Titanium and Titanium Alloy Gasting (Beijing,China Machine Press,2005) p.14(谢成木,钛及钛合金铸造 (北京,机械工业出版社,2005) p.14)
[14] A.J.Dunlop,Hans Rensing,Method for making tungstentitanium sputtering targets and product,United States Patent,4838935 (1989)
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