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通过多靶共溅射的方法,制备了(AlCrTaTiNi)N和双层AlCrTaTiNi/(AlCrTaTiNi)N扩散阻挡层,并利用XRD,EDS和SEM研究了其组织结构、相组成及在高温下的热稳定性能.结果表明,Cu/(AlCrTaTiNi)N/Si经500℃退火后界面处已有脱开倾向,700℃后Cu膜则完全脱落.AlCrTaTiNi可增强Cu和(AlCrTaTiNi)N的粘附性.AlCrTaTiNi/(AlCrTaTiNi)N经800℃退火后仍能起到有效的扩散阻挡性能,900℃下出现了深能级的Cu-Si相,方块电阻急剧升高,表明该阻挡层失效.

参考文献

[1] Chen Y Y,Duval T,Hung U,Yeh J W,Shih H C.Corros Sci,2005; 47:2257
[2] ZhuJM,FuHM,ZhangHF,WangAM,LiH,HuZ Q.Mater Sci Eng,2010; A527:6975
[3] Tang W Y,Chuang M H,Chen H Y,Yeh J W.Surf Coat Technol,2010; 204:3118
[4] Chou Y L,Yeh J W,Shih H C.Corros Sci,2010; 52:2571
[5] Chen Y Y,Duval T,Hung U D,Corros Sci,2005; 47:2679
[6] Yeh J W,Chen S K,Lin S J,Gan J Y,Chin T,Tsau T T,Chang S Y.Adv Eng Mater,2004; 6:299
[7] Chang S Y,Chen M K.Thin Solid Films,2009; 517:4961
[8] Tsai M H,Yeh J W,Gan J Y.Thin Solid Films,2008; 516:5527.
[9] Chang S Y,Chen D S.Appl Phys Lett,2009; 94:243
[10] Chang S Y,Wang C Y,Li C E,Huang Y C.NanoSci NanoTechnol Lett,2011; 3:289
[11] Chang S Y,Li C E,Huang Y C,Huang Y C.J Alloys Compd,2012; 515:4
[12] Chang S Y,Chen D S.Mater Chem Phys,2011; 125:5
[13] Zhao C R,Du H,Liu M X,Han Z S.Semicond Technol,2008; 33:374(赵超荣,杜寰,刘梦新,韩郑生.半导体技术,2008; 33:374)
[14] Ogawa E T,Lee K D,Matsuhashi H,Ko K S,Justison P R,Ramamurthi A N,Bierwag A J,Ho P S.39th Annual International Reliability Physics Symposium Proceedings,Oriando,Florida:IEEE,2001:341
[15] Wang L,Cao Z H,Hu K,She Q W,Meng X K.Mater Chem Phys,2012; 135:806
[16] Liu C H,Liu W,Wang Y H,An Z,Song Z X,Xu K W.Microelectron Eng,2012; 98:80
[17] Wang Y S,Lee W H,Wang Y L,Hung C C,Chang S C.J Phys Chem Solids,2008; 69:601
[18] Yang L Y,Zhang D H,Li C Y,Foo P D.Thin Solid Films,2004; 462-463:176
[19] Tsao J C,Liu C P,Wang Y L,Chen K W,Lo K Y.J Phys Chem Solids,2008; 69:561
[20] Traving M,Zienert I,Zschech E,Schindler G,SteinhSgl W,Engelhardt M.Appl Surf Sci,2005; 252:11
[21] Jacquemin J P,Labonne E,Yalicheff C,Royet E,Vannier P,Delsol R,Normandon P.Microelectron Eng,2005; 82:613
[22] Hubner R,Hecker M,Mattern N,Hoffmann V,Wetzig K,Wenger C,Engelmann H J,Wenzel C,Zschech E,Bartha J W.Thin Solid Films,2003; 437:248
[23] Zhang H Q,Slade C G,Antoinette M.J Mater Res,2011; 26:633
[24] Shi C X,Zhong Q P,Li C G.The Dictionary of Chinese Materials Engineering.Beijing:Chemical Industry Press,2005:160(师昌绪,钟群鹏,李成功.中国材料工程大典.北京:化学工业出版社,2005:160)
[25] Shen Y L,Guo Y L,Minor C A.Acta Mater,2000; 48:1667
[26] Davis J A,Meindl J D,translated by Luo Z Y,Ye Z C,Lv Y Q,Yu W J.Interconnect Technology and Design for Gigascale Integration.Beijing:China Machine Press,2010:128(Davis J A,Meindl J D著,骆祖莹,叶作昌,吕勇强,喻文健译.吉规模集成电路互联工艺及设计.北京:机械工业出版社,2010:128)
[27] Song Z X,Ju X H,Xu K W.Acta Metall Sin,2002; 38:723(宋忠孝,鞠新华,徐可为.金属学报,2002:38:723)
[28] Song Z X,Xu K W,Chen H.Microelectron Eng,2004; 71:28
[29] Ryu C,Kwon K W,Loke A L S,Lee H,Nogami T,Dubin V M,Kavari R A,Ray G W,Wong S S.IEEE Trans Electron Devices,1999; 46:1113
[30] Zheng G F,Fu J H,Li Y T,Du S W,Jiang L W.Heat Treat Met,2013; 38:113(郑光锋,付建华,李永堂,杜诗文,蒋立文.金属热处理,2013;38:113)
[31] Bai X Y,Wang Y,Xu K W.Rare Met Mater Eng,2005; 34:259(白宣羽,汪渊,徐可为.稀有金属材料与工程,2005; 34:259)
[32] Yang Y T.Microelectron Technol,2000; 28(1):37(杨银堂.微电子技术,2000; 28(1):37)
[33] Cao Z H,Hu K,Meng X K.J Appl Phys,2009; 106:113513
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