通过阴极还原在纳米TiO2膜上电沉积Cu2O, 获得了p-Cu2O/n- TiO2异质结电极. 研究了沉积温度对Cu2O膜厚、纯度和形貌的影响, 制备出纯度较高、粒径为40～50nm的Cu2O薄膜. 纳米Cu2O膜在200℃烧结后透光性最好, 禁带宽度为2.06eV. 光电化学测试表明纳米p-Cu2O/n-TiO2异质结电极呈现较强的n-型光电流响应并且能够提高光电转换效率.
TiO2 film; heterojunction electrode; photoelectrochemistryThis paper introduced the electrochemical deposition of Cu2O thin films on TiO2 films by cathodic reduction to form p-Cu2O/n-TiO2 heterostructure electrode. The effects of bath temperature on film thickness, purity and morphology of Cu2O films were studied. Pure spherically shaped Cu2O grains with 40～50nm diameter were obtained. It is found that annealing at 200℃ can improve the spectral transmittance of the Cu2O film and the film has a band gap of 2.06eV. The measurements of photoelectrochemical behavior of the nanocrystalline p-Cu2O/n-TiO2 heterostructure electrode show that such heterostructure electrode produces strong n-type spectral response and can improve the photoelectron conversion efficiency.
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